NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMN2075U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Input Capacitance Cas e Mat erial: Molded P las t ic, Green Molding Com pound. Fast Switching Speed UL Flammability Classification Rating 94V-0 Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Terminals Connections: See Diagram Below Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (Approximate) D D G G S S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2075U-7 SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMN2056U DMN2075U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 4.2 A Continuous Drain Current (Note 5) I A D State 3.4 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.2 A Pulsed Drain Current (Note 6) 27 A I DM Pulsed Body Diode Forward Current (Note 6) 24 A I SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 0.8 W PD 156 C/W Thermal Resistance, Junction to Ambient T = +25C R A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 16V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D 25 38 V = 4.5V, I = 3.6A GS D Static Drain-Source On-Resistance R m DS(ON) 30 45 V = 2.5V, I = 3.1A GS D Forward Transfer Admittance Y 13 S V = 5V, I = 3.6A FS DS D Diode Forward Voltage 0.75 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 594.3 pF ISS V = 10V, V = 0V, DS GS Output Capacitance 64.5 pF COSS f = 1.0MHz Reverse Transfer Capacitance 57.7 pF C RSS Gate Resistance R 1.5 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 7.0 nC QG V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.9 nC Q GS I = 3.6A D Gate-Drain Charge Q 1.4 nC GD Turn-On Delay Time 7.4 ns t D(ON) Turn-On Rise Time 9.8 ns t V = 10V, V = 4.5V, R DD GS Turn-Off Delay Time t 28.1 ns R = 2.78, R = 1.0 D(OFF) L g Turn-Off Fall Time 6.7 ns t F Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2075U September 2017 Diodes Incorporated www.diodes.com Document number: DS31837 Rev. 7 - 3