D S D D D G DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Benefit and Features Low On-Resistance Low Input Capacitance I D Fast Switching Speed V R (BR)DSS DS(on) max T = 25C A Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) 2.8A 48m V = 4.5V GS 20V Gree Device (Note 2) 2.6A 59m V = 2.5V GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: SOT363 ) and yet maintain superior switching state resistance (R DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish Matte Tin annealed over Alloy42 leadframe. Power management functions Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.006 grams (approximate) SOT363 Top View Top View Internal Schematic Ordering Information (Note 3) Part Number Case Packaging DMN2075UDW-7 SOT363 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at DMN2075UDW Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8V V GSS T = 25C Steady A 2.8 A I D State 2.2 T = 70C A Continuous Drain Current (Note 5) V = 4.5V GS T = 25C 3.1 A t<5s I A D 2.5 T = 70C A Steady T = 25C 2.6 A I A D State 2.1 T = 70C A Continuous Drain Current (Note 5) V = 2.5V GS T = 25C 2.8 A t<5s I A D 2.2 T = 70C A Pulsed Drain Current (10s pulse, Duty cycle = 1%) I 20 A DM Maximum Continuous Body Diode Current I 1.0 A S Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 4) 0.5 W P D Steady state 257 C/W Thermal Resistance, Junction to Ambient (Note 4) R JA t<5s 213 C/W Total Power Dissipation (Note 5) 0.58 W P D Steady state 221 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<5s 183 C/W Thermal Resistance, Junction to Case (Note 5) R 65 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.4 - 1.0 V V = V , I = 250 A GS(th) DS GS D - 40 48 V = 4.5V, I = 3A GS D - 45 59 V = 2.5V, I = 2A GS D m Static Drain-Source On-Resistance R DS (ON) - 51 70 V = 1.8V, I = 1A GS D - 68 100 V = 1.5V, I = 1A GS D Forward Transfer Admittance - 13 - S Y V = 5V, I = 3A fs DS D Diode Forward Voltage - 0.75 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 6) - - Input Capacitance C 594.3 pF iss V = 10V, V = 0V, DS GS - - Output Capacitance C 64.5 pF oss f = 1.0MHz - - Reverse Transfer Capacitance C 57.7 pF rss - - Gate Resistance R 1.5 V = 0V, V = 0V, f = 1MHz g DS GS - - Total Gate Charge Q 7.0 nC g V = 4.5V, V = 10V, GS DS - - Gate-Source Charge Q 0.9 nC gs I = 3.6A D Gate-Drain Charge - 1.4 - nC Q gd Turn-On Delay Time - 7.4 - ns t D(on) Turn-On Rise Time - 9.8 - ns t V = 10V, V = 4.5V, r DD GS Turn-Off Delay Time - 28.1 - ns R = 2.78, R = 1.0 t L G D(off) Turn-Off Fall Time t - 6.7 - ns f Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Short duration pulse test used to minimize self-heating effect 7. Guaranteed by design. Not subject to production testing. 2 of 6 September 2011 DMN2075UDW Diodes Incorporated www.diodes.com Document number: DS35542 Rev. 1 - 2 NEW PRODUCT