DMN2080UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = 4.5V, T = +25C) Features GS A Built-in G-S Protection Diode Against ESD 2kV HBM BV R Q Q I DSS DS(ON) g gd D Trench-MOS Technology with The Lowest R : DS(ON) 20V 43m 7.4nC 1.5nC 4.0A R = 43m to Minimize On-State Losses DS(ON) V = 0.7V Typ. for A Low Turn-On Potential GS(TH) CSP with Footprint 0.8mm 0.8mm Height = 0.35mm for Low Profile Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation MOSFET has been designed to minimize the on- Halogen and Antimony Free. Green Device (Note 3) state resistance (R ) with thin WLCSP packaging process and DS(ON) yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X2-WLB0808-4 (Type B) Terminal Connections: See Diagram Below Applications DC-DC Converters Battery Management Load Switch Top-View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN2080UCB4-7 X2-WLB0808-4 (Type B) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2080UCB4 Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS T = +25C 3.0 A Continuous Source Current V = 4.5V (Note 5) I A GS D 2.4 T = +70C A T = +25C 4.0 A Continuous Source Current V = 4.5V (Note 6) A GS I D 3.2 T = +70C A Pulsed Drain Current (Pulse Duration 10s, Duty Cycle 1%) I 8 A DM Continuous Source-Drain Diode Current I 0.74 A S Pulse Diode Forward Current I 15 A SM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.71 W P D Thermal Resistance, Junction to Ambient (Note 5) R 176 C/W JA Total Power Dissipation (Note 6) 1.25 W P D Thermal Resistance, Junction to Ambient (Note 6) 99 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG . Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 - - V DSS V = 0V, I = 250A GS D Zero Gate Voltage Drain Current - - 1.0 A I V = 20V, V = 0V DSS DS GS - - 0.5 V = 4.5V, V = 0V GS DS Gate-Body Leakage I A GSS - - 6 V = 8V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 0.7 1 V V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 1.0A 43 56 GS D 49 68 V = 2.5V, I = 1.0A GS D Static Drain-Source On-Resistance - m RDS(ON) 60 90 V = 1.8V, I = 1.0A GS D 72 115 V = 1.5V, I = 0.5A GS D Forward Transfer Admittance Y - 4 - S V = 10V, I = 1.0A fs DS S Body Diode Forward Voltage V - 0.7 1.2 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 540 - pF iss V = 10V, V = 0V, DS GS Output Capacitance C - 70 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 33 - pF rss Gate Resistance R - 1 - k V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 7.4 - nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q - 0.8 - nC gs I = 1.0A D Gate-Drain Charge Q - 1.5 - nC gd Turn-On Delay Time - 152 - ns t D(ON) 268 Turn-On Rise Time t - - ns R V = 10V, I = 1.0A DD D 1245 V = 4.5V, R = 1, R = 10 Turn-Off Delay Time t - - ns GEN G L D(OFF) 816 Turn-Off Fall Time t - - ns F 13 Reverse Recovery Charge Q - - nC RR I = 1A, di/dt = 100A/s F 5 Body Diode Reverse Recovery Time - - ns tRR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN2080UCB4 August 2017 Diodes Incorporated www.diodes.com Document number: DS38966 Rev. 2 - 2 NEW PRODUCT AADDVVAANNCCEED I INNFFOORRMMAATTIIOONN