DMN21D2UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BV R Max DSS DS(ON) Very Low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.99 VGS = 4.5V 760mA Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 0.6mm 1.2 V = 2.5V 700mA GS Low Package Profile, 0.5mm Maximum Package Height 20V ESD Protected Gate 2.4 VGS = 1.8V 500mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 3.0 V = 1.5V GS 350mA For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer Description and Applications to the related automotive grade (Q-suffix) part. A listing can be found at This MOSFET is designed to minimize the on-state resistance DMN21D2UFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady TA = +25C 760 mA ID State 610 TA = +70C Continuous Drain Current (Note 6) V = 4.5V GS TA = +25C 850 t<5s I mA D 700 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 0.8 A S Pulsed Drain Current (Note 7) I 1.0 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.38 TA = +25C Total Power Dissipation (Note 5) P W D 0.25 TA = +70C Steady State 325 Thermal Resistance, Junction to Ambient (Note 5) C/W RJA t<5s 244 0.9 TA = +25C Total Power Dissipation (Note 6) P W D 0.57 TA = +70C Steady State 141 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<5s 106 Operating and Storage Temperature Range C TJ, TSTG -55 to +150 Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 20V, V = 0V c DSS DS GS Gate-Source Leakage 1 A IGSS VGS = 10V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.4 1.0 V VGS(TH) VDS = VGS, ID = 250A 0.6 0.99 VGS = 4.5V, ID = 100mA 0.7 1.2 VGS = 2.5V, ID = 50mA Static Drain-Source On-Resistance R DS(ON) 0.9 2.4 VGS = 1.8V, ID = 20mA 1.2 3.0 VGS = 1.5V, ID = 10mA Forward Transfer Admittance Y 180 ms V = 10V, I = 400mA fs DS D Diode Forward Voltage V 0.6 1.0 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 27.6 pF iss VDS = 16V, VGS = 0V, Output Capacitance C 4.0 pF oss f = 1.0MHz Reverse Transfer Capacitance 2.8 pF Crss 0.41 nC Total Gate Charge, VGS = 4.5V Qg 0.93 nC Total Gate Charge, VGS = 10V Qg V = 10V, I = 250mA DS D Gate-Source Charge 0.06 nC Qgs Gate-Drain Charge 0.06 nC Qgd Turn-On Delay Time tD(ON) 3.5 ns V = 10V, V = 4.5V, DD GS Turn-On Rise Time t 4.2 ns r RL = 47, Rg = 10, Turn-Off Delay Time t 19.6 ns D(OFF) ID = 200mA Turn-Off Fall Time t 9.8 ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 DMN21D2UFB January 2020 Diodes Incorporated www.diodes.com Document number: DS35564 Rev. 6 - 2