DMN2250UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R (BR)DSS DS(on) max Very Low Gate Threshold Voltage V , 1.0V max GS(TH) T = +25C A Low Input Capacitance 1.35A 0.17 V = 4.5V GS Fast Switching Speed 20V 0.23 V = 2.5V 1.15A GS ESD Protected Gate 0.25 V = 1.8V 1.10A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) Case: X1-DFN1006-3 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding applications. Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable e4 DC-DC Converters per MIL-STD-202, Method 208 Power Management Functions Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 Body Diode Gate S D Gate G Protection Source Diode Bottom View Top View ESD PROTECTED Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2250UFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2250UFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS T = +25C Steady A 1.35 A Continuous Drain Current (Note 5) V = 4.5V I GS D State 1.03 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) 6 A I DM Maximum Body Diode continuous Current I 1 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.5 A Total Power Dissipation (Note 5) W P D T = +70C 0.3 A Steady state Thermal Resistance, Junction to Ambient (Note 5) 278 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250 A DSS GS D 100 nA Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 1 A I V = 6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.35 1.0 V V V = V , I = 250 A GS(th) DS GS D 170 V = 4.5V, I = 1A GS D Static Drain-Source On-Resistance R 230 m V = 2.5V, I = 1A DS (ON) GS D 250 V = 1.8V, I = 1A GS D Forward Transfer Admittance Y 1.4 S V = 10V, I = 1A fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) 94 Input Capacitance C pF iss V =16V, V = 0V, DS GS 12 Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance 10 pF C rss Gate resistance 87.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS 1.4 nC Total Gate Charge (V = 4.5V) Q GS g 3.1 Total Gate Charge (V = 10V) Q nC GS g V = 10V, I = 250mA DS D 0.13 Gate-Source Charge Q nC gs 0.14 Gate-Drain Charge Q nC gd 4.3 Turn-On Delay Time t ns D(on) V = 10V, V = 4.5V, DD GS 6.1 Turn-On Rise Time t ns r R = 47 , R = 10 , L G 59.4 Turn-Off Delay Time t ns D(off) I = 200mA D 25.4 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 February 2013 DMN2250UFB Diodes Incorporated www.diodes.com Document number: DS36035 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT