A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I max D Fast Switching Speed V R Max T = 25 C (BR)DSS DS(on) A (Notes 4) Lead Free, RoHS Compliant (Note 1) 1.73A Halogen and Antimony Free.Gree Device (Note 2) 200m V = 4.5V GS ESD Protected Gate 2KV 260m V = 2.5V 1.50A GS 20V Qualified to AEC-Q101 Standards for High Reliability 400m V = 1.8V 1.27A GS 500m V = 1.5V 1.15A GS Mechanical Data Description and Applications Case: X1-DFN1212-3 Case Material: Molded Plastic, Green Molding Compound. This MOSFET has been designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(on) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Terminals: Finish NiPdAu over Copper leadframe. Solderable Load switch per MIL-STD-202, Method 208 Weight: 0.005 grams (approximate) Drain X1-DFN1212-3 Body Diode Gate Gate Protection Source Diode Top View Bottom View Equivalent Circuit Pin-out Top view Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2300UFD-7 KS2 7 8 3000 Notes: 1. No purposefully added lead 2. Diodes Inc sGree policy can be found on our website at I (A) P =100s D W A Product Line of Diodes Incorporated DMN2300UFD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS T = 25C (Note 4) 1.73 A Steady Continuous Drain Current T = 85C (Note 4) I 1.34 A A D State T = 25C (Note 5) 1.21 A Pulsed Drain Current (Note 6) 6.0 A I DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit (Note 4) 0.96 W Power Dissipation P D (Note 5) 0.47 W (Note 4) 130 C/W Thermal Resistance, Junction to Ambient R JA (Note 5) 265 C/W Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is mounted on minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. Thermal Characteristics 10 10 R DS(ON) I(A) P =1ms Single Pulse DW Limited 9 R = 136 C/W JA R (t) = R *r(t) JA JA T - T = P*R 8 JA JA 1 7 6 5 0.1 4 3 0.01 2 T = 150 C J(MAX) I(A) T= 25 C D A 1 P =10s Single Pulse W 0.001 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) DS Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area 2 of 7 September 2011 DMN2300UFD Diodes Incorporated www.diodes.com Datasheet Number: DS35443 Rev. 2 - 2 I ) DC (A D A I ( ) P =10s D W 1 I (A) P = s D W I (A) P =100ms D W I (A) P =10ms D W P(pk), PEAK TRANSIENT POWER (W) I , DRAIN CURRENT (A) D