DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 2 I max D Footprint of Just 1.3 mm T = +25C A V Max R (BR)DSS DS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance <200m 2.11A 195m V = 4.5V Low Gate Threshold Voltage GS Fast Switching Speed 1.83A 260m V = 2.5V GS 20V Ultra-Small Surface Mount Package 1.51A 380m V = 1.8V GS ESD Protected Gate 2KV 520m V = 1.5V 1.29A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: X2-DFN1310-6 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load switch Terminals: Finish NiPdAu Annealed over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 D1 D2 G1 G2 Gate Gate Protection Protection Diode S1 Diode S2 ESD PROTECTED TO 2kV Device Symbol Top View Pin-Out Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2300UFL4-7 23N 7 8 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2300UFL4 Maximum Ratings T = +25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 2.11 A Continuous Drain Current (Note 6) I A D State 1.19 TA = +85C Pulsed Drain Current (Note 7) 6.0 A I DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit (Note 5) 0.53 Power Dissipation P W D (Note 6) 1.39 (Note 5) 238 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 90 Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 100 Single Pulse 90 R = 230C/W JA R = r * R 80 JA(t) (t) JA T - T = P * R J A JA(t) 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 R (t) = r(t) * R JA JA D = 0.005 R = 230C/W JA Single Pulse Duty Cycle, D = t1/ t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 2 Transient Thermal Resistance 2 of 7 September 2014 DMN2300UFL4 Diodes Incorporated www.diodes.com Datasheet Number: DS35946 Rev. 2 - 2 P , PEAK TRANSIENT POIWER (W) (PK) r(t), TRANSIENT THERMAL RESISTANCE