DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 2 Footprint of just 0.6mm thirteen times smaller than SOT23 I max D V R (BR)DSS DS(on) 0.4mm profile ideal for low profile applications TA = +25C Low Gate Threshold Voltage 1.0A 320m V = 4.5V GS Fast Switching Speed 20V 0.65A 500m V = 2.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.4A 1000m V = 1.8V GS Halogen and Antimony Free. Green Device (Note 3) ESD Protected Gate 2KV Mechanical Data Description and Applications Case: X2-DFN1006-3 This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load switch Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) D X2-DFN1006-3 G S D G Gate Protection ESD PROTECTED TO 2kV S Diode Bottom View Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2320UFB4-7B ND 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2320UFB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 1.0 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 0.7 T = +100C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 6 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.52 W P D Total Power Dissipation (Note 6) 1.07 W P D Thermal Resistance, Junction to Ambient (Note 5) 240 C/W R JA Thermal Resistance, Junction to Ambient (Note 6) 117 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 - - V BV V = 0V, I = 250A DSS GS D - - 1 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage - - 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.50 - 0.95 V V = V , I = 250A GS(th) DS GS D - - 320 V = 4.5V, I = 500mA GS D Static Drain-Source On-Resistance R - - 500 m V = 2.5V, I = 400mA DS (ON) GS D - - 1,000 V = 1.8V, I = 100mA GS D Diode Forward Voltage V - 0.7 1.2 V V = 0V, I = 300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 71 - Input Capacitance C pF iss V = 10V, V = 0V, DS GS Output Capacitance - 12 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 9.4 - pF C rss Gate Resistance - 69 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge - 0.89 - nC Q g V = 4.5V, V = 10V, GS DS - 0.14 - Gate-Source Charge Q nC gs I = 1A D - 0.16 - Gate-Drain Charge Q nC gd - 4.9 - Turn-On Delay Time t ns D(on) - 6.9 - Turn-On Rise Time t ns r V = 10V, I = 1A DS D - 21.7 - Turn-Off Delay Time t ns V = 4.5V, R = 6 D(off) GS G - 10.6 - Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 April 2015 DMN2320UFB4 Diodes Incorporated www.diodes.com Document number: DS37892 Rev. 1 - 2