DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) Very low Gate Threshold Voltage, 1.0V Max T = +25C A Low Input Capacitance 0.9A 0.6 V = 4.5V GS Fast Switching Speed 0.8 V = 2.5V 0.7A GS 20V ESD Protected Gate 0.5A 1.0 V = 1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.3A 1.6 V = 1.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: X1-DFN1212-3 resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic UL Flammability Classification performance, making it ideal for high efficiency power management Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe Power Management Functions Solderable per MIL-STD-202, Method 208 e4 Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Load Switch Weight: 0.005 grams (Approximate) Drain Body Diode Gate Gate Protection Source Diode ESD PROTECTED Top View Bottom View Equivalent Circuit Pin-out Top view Ordering Information (Note 4) Part Number Case Packaging DMN2400UFD-7 X1-DFN1212-3 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2400UFD Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 20 V V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 0.9 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 0.7 T = +70C A Steady T = +25C 0.7 A Continuous Drain Current (Note 6) V = 2.5V I A GS D State 0.5 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 3.0 A I DM Maximum Body Diode Forward Current (Note 6) 0.8 A I S Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.4 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 280 C/W R JA Total Power Dissipation (Note 6) P 0.8 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 140 C/W R JA Thermal Resistance, Junction to Case (Note 6) 112 C/W R Jc Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250A DSS GS D 80 V = 4.5V, V = 0V DS GS - - nA Zero Gate Voltage Drain Current T = +25C I J DSS 100 V = 20V, V = 0V DS GS Gate-Source Leakage - - 1.0 A I V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.45 - 1.0 V V V = V , I = 250A GS(th) DS GS D - 0.35 0.6 V = 4.5V, I = 200mA GS D 0.45 0.8 V = 2.5V, I = 200mA GS D Static Drain-Source On-Resistance R DS (ON) 0.6 1.0 V = 1.8V, I = 100mA GS D - 0.7 1.6 V = 1.5V, I = 50mA GS D Forward Transfer Admittance Y - 1.4 - S V = 3V, I = 200mA fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 500mA, SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 37.0 - Input Capacitance C pF iss V =16V, V = 0V, DS GS Output Capacitance - 5.7 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 4.2 - pF C rss Gate Resistance - 68 - R V = 0V, V = 0V, g DS GS Total Gate Charge - 0.5 - nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge - 0.07 - nC Q gs I = 250mA D - 0.1 - Gate-Drain Charge Q nC gd 4.06 Turn-On Delay Time t - - ns D(on) VDD = 10V, VGS = 4.5V, 7.28 Turn-On Rise Time t - - ns r R = 47, R = 10, L G 13.74 Turn-Off Delay Time t - - ns D(off) I = 200mA D 10.54 Turn-Off Fall Time - - ns tf Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2400UFD February 2015 Diodes Incorporated www.diodes.com Document number: DS35475 Rev. 5 - 2 NEW PRODUCT