DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Dual N-Channel MOSFET D V R (BR)DSS DS(on) T = +25C A Low On-Resistance: 3.0 V = 4.5V 240mA GS 3.0 4.5V 20V 180mA 6.0 V = 1.8V GS 4.0 2.5V 6.0 1.8V 10 1.5V Description Very Low Gate Threshold Voltage, 1.05V Max This new generation MOSFET is designed to minimize the on-state Low Input Capacitance resistance (R ) and yet maintain superior switching performance, DS(on) Fast Switching Speed making it ideal for high efficiency power management applications. Ultra-Small Surface Mount Package ESD Protected Gate (HBM 300V) Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) DC-DC Converters Power Management Functions Mechanical Data Case: SOT963 Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (Approximate) D G S 1 2 2 SOT963 G D S 1 1 2 ESD PROTECTED Top View Top View Schematic and Transistor Diagram Ordering Information (Note 4) Part Number Case Packaging DMN26D0UDJ-7 SOT963 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN26D0UDJ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V 20 V DSS Gate-Source Voltage V 10 V GSS Steady T = +25C 240 A Continuous Drain Current (Note 6) V = 4.5V I mA GS D State 190 T = +70C A Steady T = +25C 180 A mA Continuous Drain Current (Note 6) V = 1.8V I GS D State 140 T = +70C A Pulsed Drain Current - T = 10s I 805 mA P DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 300 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 409 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 100A DSS GS D Zero Gate Voltage Drain Current T = +25C 500 V = 20V, V = 0V J nA DS GS I DSS 1.7 A T = +85C (Note 8) V = 2.6V, V = 0V J DS GS 1 A V = 10V, V = 0V GS DS Gate-Body Leakage I GSS 100 nA V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.45 0.8 1.05 V V V = V , I = 250A GS(th) DS GS D 1.8 3.0 V = 4.5V, I = 100mA GS D 2.5 4.0 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance 3.4 6.0 R V = 1.8V, I = 20mA DS (ON) GS D 4.7 10.0 V = 1.5V, I = 10mA GS D 9.5 V = 1.2V, I = 1mA GS D Forward Transconductance Y 180 240 mS V =10V, I = 0.1A fs DS D Source-Drain Diode Forward Voltage V 0.5 0.8 1.0 V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 14.1 pF iss V = 15V, V = 0V DS GS Output Capacitance 2.9 pF Coss f = 1.0MHz Reverse Transfer Capacitance 1.6 pF C rss SWITCHING CHARACTERISTICS, V = 4.5V (Note 8) GS Turn-On Delay Time 3.8 t d(on) Rise Time 7.9 t V = 4.5V, V = 10V r GS DD ns Turn-Off Delay Time t 13.4 I = 200mA, R = 2.0 d(off) D G Fall Time t 15.2 f Notes: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch with minimum recommended pad layout pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at