DMN2990UFZ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low Package Profile, 0.42mm Maximum Package Height D V R max (BR)DSS DS(ON) T = +25C 0.62mm x 0.62mm Package Footprint A 250mA Low On-Resistance 0.99 V = 4.5V GS Very Low Gate Threshold Voltage, 1.0V Max 1.2 V = 2.5V 230mA GS 20V ESD Protected Gate 1.8 V = 1.8V 180mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2.4 V = 1.5V 150mA GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN0606-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe General Purpose Interfacing Switch e4 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.001 grams (Approximate) Analog Switch X2-DFN0606-3 ESD PROTECTED Top View Bottom View Equivalent Circuit Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN2990UFZ-7B X2-DFN0606-3 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2990UFZ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 250 A Continuous Drain Current (Note 5) V = 4.5V I mA GS D State 170 T = +85C A Pulsed Drain Current (Note 6) I 800 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady state 320 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady state 402 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250 A DSS GS D 100 nA Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V C DSS DS GS Gate-Source Leakage 100 nA I V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 1.0 V V V = V , I = 250 A GS(th) DS GS D 0.60 0.99 V = 4.5V, I = 100mA GS D 0.75 1.2 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R 0.90 1.8 V = 1.8V, I = 20mA DS(ON) GS D 1.2 2.4 V = 1.5V, I = 10mA GS D 2.0 V = 1.2V, I = 1mA GS D Forward Transfer Admittance Y 180 mS V = 10V, I = 400mA fs DS D Diode Forward Voltage V 0.6 1.0 V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 28.2 55.2 pF C iss V = 16V, V = 0V, DS GS Output Capacitance 4.0 8.0 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.8 5.6 pF C rss Total Gate Charge 0.5 1.0 nC Q g V = 4.5V, V = 10V, GS DS 0.14 Gate-Source Charge Q 0.07 nC gs I = 250mA D 0.14 Gate-Drain Charge Q 0.07 nC gd 10 Turn-On Delay Time t 3.5 ns D(on) V = 10V, V = 4.5V, DD GS 10 Turn-On Rise Time t 2.1 ns r R = 47 , R = 10 , L G 35 Turn-Off Delay Time t 22 ns D(off) I = 200mA D 15 Turn-Off Fall Time t 7.7 ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 January 2015 DMN2990UFZ Diodes Incorporated www.diodes.com Document number: DS36693 Rev. 4 - 2 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT