DMN2991UDA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Very Low Gate Threshold Voltage, 1.0V Maximum A Low Input Capacitance 0.99 V = 4.5V 0.45A GS Fast Switching Speed 1.2 V = 2.5V 0.40A GS 20V Ultra-Small Surface Mount Package 0.8mm x 0.6mm 1.8 V = 1.8V 0.34A GS ESD Protected Gate 2.4 V = 1.5V 0.30A GS Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. Green Device (Note 3 ) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: X2-DFN0806-6 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 General Purpose Interfacing Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe Solderable Analog Switch per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Pin1 G S D 1 2 2 D1 D2 G1 G2 ESD PROTECTED Gate Protection Gate Protection S1 S2 Diode Diode D S G 1 1 2 Pin Configuration Top View Bottom View Device Symbol Top View Ordering Information (Note 4) Part Number Case Packaging DMN2991UDA-7B X2-DFN0806-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2991UDA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS 0.45 T = +25C Steady A Continuous Drain Current (Note 5) A I D State 0.36 T = +70C A Pulsed Drain Current (Note 6) 1.2 A IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.31 W P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 404 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V C DSS DS GS Gate-Source Leakage I 10 A V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 0.78 1.0 V V = V , I = 250A GS(TH) DS GS D 0.47 0.99 V = 4.5V, I = 100mA GS D 0.63 1.2 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance R DS(ON) 0.84 1.8 V = 1.8V, I = 20mA GS D 1.1 2.4 VGS = 1.5V, ID = 10mA Diode Forward Voltage 0.6 1.0 V V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 21.5 pF iss V = 16V, V = 0V, DS GS Output Capacitance C 4.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 3.7 pF rss Gate Resistance R 0.94 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge 0.35 nC Q g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.07 nC Q I = 250mA gs D Gate-Drain Charge 0.08 nC Q gd Turn-On Delay Time 5.6 ns t D(ON) V = 10V, V = 4.5V, DD GS Turn-On Rise Time 4.9 ns t R R = 47, R = 10, L g Turn-Off Delay Time 60.6 ns t D(OFF) I = 200mA D Turn-Off Fall Time 27.6 ns t F Reverse Recovery Time t 12.3 ns I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge Q 1.1 nC I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2991UDA May 2019 Diodes Incorporated www.diodes.com Document number: DS41328 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT ADVANCE INFORMATION