DMN2991UFO 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile ID Max BV R Max DSS DS(ON) 0.6mm x 0.4mm Package Footprint TA = +25C Low On-Resistance 0.99 VGS = 4.5V 0.54A Very Low Gate Threshold Voltage, 1.0V Max 1.2 VGS = 2.5V 0.49A ESD Protected Gate 20V 1.8 V = 1.8V 0.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 2.4 V = 1.5V 0.35A GS For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and Description and Applications manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. This MOSFET is designed to minimize the on-state resistance DMN2991UFO Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS 0.54 Steady TA = +25C A Continuous Drain Current (Note 5) VGS = 4.5V ID State 0.43 TA = +85C Pulsed Drain Current (Note 6) 1.2 A IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) Steady State P 0.44 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State R 281 C/W JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D 0.5 0.99 VGS = 4.5V, ID = 100mA 0.6 1.2 VGS = 2.5V, ID = 50mA Static Drain-Source On-Resistance RDS(ON) 0.8 1.8 VGS = 1.8V, ID = 20mA 1.0 2.4 VGS = 1.5V, ID = 10mA Diode Forward Voltage 0.7 1.0 V VSD VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 21.5 pF VDS = 15V, VGS = 0V, Output Capacitance C 4.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 3.7 pF rss Gate Resistance R 0.94 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge Q 0.35 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.07 nC gs ID = 250mA Gate-Drain Charge 0.08 nC Qgd Turn-On Delay Time 5.6 ns tD(ON) VDD = 10V, VGS = 4.5V, Turn-On Rise Time 4.9 ns tR RL = 47, Rg = 10, Turn-Off Delay Time 60.6 ns tD(OFF) I = 200mA D Turn-Off Fall Time 27.6 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2991UFO May 2020 Diodes Incorporated www.diodes.com Document number: DS41889 Rev. 3 - 2 ADVANCED INFORMATION