DMN3007LSSQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 7m V = 10V 16A GS 30V Fast Switching Speed 10m V = 4.5V 13.5A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Available (Note 4) This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management Case: SO-8 applications. Case Material: Molded Plastic,Gree Molding Compound. Backlighting UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) e3 SO-8 D S D S D G S D Top View G D S Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMN3007LSSQ-13 Automotive SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3007LSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 6) Steady T = +25C 16 A I A D State 13 T = +70C A Pulsed Drain Current (Note 7) 64 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 2.5 W D Thermal Resistance, Junction to Ambient 50 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.3 2.1 V V = V , I = 250 A GS(th) DS GS D 5 7 V = 10V, I = 15A GS D Static Drain-Source On-Resistance R m DS (ON) 7.9 10 V = 4.5V, I = 13A GS D Forward Transconductance 16.4 S g V = 10V, I = 15A fs DS D Diode Forward Voltage 0.67 1.2 V V V = 0V, I = 2.3A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2714 pF C iss V = 15V, V = 0V DS GS Output Capacitance C 436 pF oss f = 1.0MHz Reverse Transfer Capacitance C 380 pF rss Gate Resistance R 0.7 V = 0V, V = 0V, f = 1.0MHz G DS GS SWITCHING CHARACTERISTICS (Note 9) 31.2 V = 15V, V = 4.5V, I = 16A DS GS D Total Gate Charge Q g 64.2 V = 15V, V = 10V, I = 16A DS GS D nC Gate-Source Charge 7.1 Q V = 15V, V = 10V, I = 16A gs DS GS D Gate-Drain Charge 17.1 Q V = 15V, V = 10V, I = 16A gd DS GS D Turn-On Delay Time 10.3 t d(on) Rise Time t 14.8 V = 15V, V = 10V, r DS GS ns Turn-Off Delay Time t 85.1 I = 1A, R = 6.0 d(off) D G Fall Time t 43.6 f Notes: 6.Device mounted on 2 oz. Copper pads on FR-4 PCB, with R = +50C JA 7.Pulse width 10S, Duty Cycle 1%. 8.Short duration pulse test used to minimize self-heating effect. 9.Guaranteed by design. Not subject to product testing. 2 of 5 May 2014 DMN3007LSSQ Diodes Incorporated www.diodes.com Document number: DS37269 Rev. 1 - 2