DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOP-8L 9m V = 10V Case Material: Molded Plastic, Green Molding Compound. GS UL Flammability Classification Rating 94V-0 13m V = 4.5V GS Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Threshold Voltage Terminals Connections: See Diagram Low Input Capacitance Terminals: Finish - Matte Tin annealed over Copper lead Fast Switching Speed frame. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Marking Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 2) Ordering Information: See Page 4 Gree Device (Note 4) Weight: 0.072g (approximate) Qualified to AEC-Q101 Standards for High Reliability SOP-8L S D S D S D G D TOP VIEW TOP VIEW Internal Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 1) Steady T = 25C 16 A I A D State 13 T = 70C A Pulsed Drain Current (Note 3) 64 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) P 2.5 W D Thermal Resistance, Junction to Ambient 50 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with R = 50C JA 2. No purposefully added lead. 3. Pulse width 10S, Duty Cycle 1%. 4. Diodes Inc. sGree policy can be found on our website at DMN3010LSS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.1 2.0 V V = V , I = 250A GS(th) DS GS D 9 V = 10V, I = 16A GS D Static Drain-Source On-Resistance R m DS (ON) 13 V = 4.5V, I = 10A GS D Forward Transconductance 16 S g V = 10V, I = 12A fs DS D Diode Forward Voltage (Note 5) 0.5 1.2 V V V = 0V, I = 16A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 2096 pF iss V = 15V, V = 0V DS GS Output Capacitance C 329 pF oss f = 1.0MHz Reverse Transfer Capacitance C 258 pF rss Gate Resistance R 1.2 V = 0V, f = 1MHz G GS SWITCHING CHARACTERISTICS V = 15V, V = 4.5V, I = 16A 22.4 DS GS D Total Gate Charge Q g 43.7 V = 15V, V = 10.0V, I = 16A DS GS D nC Gate-Source Charge 5.5 Q V = 15V, V = 10V, I = 16A gs DS GS D Gate-Drain Charge 12.6 Q V = 15V, V = 10V, I = 16A gd DS GS D Turn-On Delay Time 7.11 t d(on) Rise Time t 10.3 V = 10V, V = 15V, r GS DS ns Turn-Off Delay Time t 58.3 R = 15, R = 6 d(off) D G Fall Time t 32.1 f Notes: 5. Short duration pulse test used to minimize self-heating effect. 20 20 V = 4.5V V = 10V GS 18 18 GS 16 16 V = 3.0V 14 14 GS 12 12 T = 150C 10 10 A 8 8 T = 125C A T = 85C A 6 6 T = 25C A 4 4 T = -55C A V = 2.5V 2 GS 2 V = 1.5V GS 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 V , SOURCE-DRAIN VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS SD Fig. 1 Typical Output Characteristics Fig. 2 Source Current vs. Source-Drain Voltage 2 of 5 November 2008 DMN3010LSS Diodes Incorporated www.diodes.com Document number: DS31259 Rev. 6 - 2 NEW PRODUCT I , DRAIN CURRENT (A) D I, SOURCE CURRENT (A) S