DMN3015LSD
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low Input Capacitance
I
D
V R
(BR)DSS DS(on) max
Low On-Resistance
T = +25C
A
15m @ V = 10V 8.4A Fast Switching Speed
GS
30V
18m @ V = 4.5V 7.7A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
Mechanical Data
state resistance (R ) and yet maintain superior switching
DS(ON)
Case: SO-8
performance, making it ideal for high efficiency power management
Case Material: Molded Plastic, Green Molding Compound.
applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications
Terminal Connections: See Diagram
DC-DC Converters
Terminals: Finish Tin Finish annealed over Copper leadframe.
Power Management Functions
Solderable per MIL-STD-202, Method 208 e3
Backlighting
Weight: 0.074 grams (approximate)
D1 D2
S1 D1
Pin1
D1
G1
G1 G2
S2
D2
S1 S2
G2 D2
Top View Equivalent Circuit
Top View
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMN3015LSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3015LSD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 8.4
A
I A
D
State 6.8
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 11.0
A
t<10s A
I
D
9.0
T = +70C
A
Maximum Body Diode Forward Current (Note 6) I 2.5 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 80 A
DM
Avalanche Current (Notes 7) L = 0.1mH I 22 A
AS
Avalanche Energy (Notes 7) L = 0.1mH E 25 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
1.2
T = +25C
A
Total Power Dissipation (Note 5) P W
D
T = +70C 0.8
A
Steady state 102
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
t<10s 62
T = +25C 1.6
A
Total Power Dissipation (Note 6) W
P
D
T = +70C 1.0
A
Steady state 78
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 47
C/W
Thermal Resistance, Junction to Case (Note 6) R 14.5
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage nA
I 100 V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V 1.3 2.5 V V = V , I = 250A
GS(TH) DS GS D
8 15 V = 10V, I = 12A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
12 18 V = 4.5V, I = 10A
GS D
Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 1415
iss
V = 15V, V = 0V,
DS GS
Output Capacitance C 119 pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C 82
rss
Gate Resistance 2.6 3.2
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
11.3
Total Gate Charge (V = 4.5V) Q
GS g
25.1
Total Gate Charge (V = 10V) Q
GS g
nC V = 15V, I = 12A
DS D
Gate-Source Charge 3.5
Q
gs
Gate-Drain Charge
Q 3.6
gd
Turn-On Delay Time t 4.8
D(on)
Turn-On Rise Time t 16.5 V = 15V, V = 10V,
r DD GS
nS
Turn-Off Delay Time t 26.1 R = 1.25, R = 3,
D(off) L G
Turn-Off Fall Time t 5.6
f
Body Diode Reverse Recovery Time t 8.5 nS I = 12A, dI/dt = 500A/s
rr S
Body Diode Reverse Recovery Charge 7.0 nC
Q I = 12A, dI/dt = 500A/s
rr S
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T = +25C.
A
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6 July 2014
DMN3015LSD
Diodes Incorporated
www.diodes.com
Document number: DS36300 Rev. 2 - 2
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