DMN3016LDN
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low On-Resistance
I
D MAX
Device V R
(BR)DSS DS(ON) max
T = +25C
A
Low Input Capacitance
7.3A
20m @ V = 10V
GS Fast Switching Speed
N-Channel 30V
6.7A
24m @ V = 4.5V
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R ) and yet maintain superior switching performance, making it
DS(ON)
Case: V-DFN3030-8
ideal for high efficiency power management applications.
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Applications Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
DC Motor Control
Weight: 0.02 grams (Approximate)
DC-AC Inverters
V-DFN3030-8
D1 D2
Pin 1
G1 D1
8
1
S1 7 2 D1
6 3 G1 G2
D2 S2
5
D2 4 G2
S1 S2
Q1 N-Channel MOSFET Q2 N-Channel MOSFET
Top View Bottom View Pin out Configuration
(Bottom View)
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN3016LDN-7 V-DFN3030-8 3000/Tape & Reel
DMN3016LDN-13 V-DFN3030-8 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3016LDN
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 7.3
A
I A
D
State 5.8
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 9.2
A
t<10s A
I
D
7.3
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) 2.5 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 45 A
DM
Avalanche Current (Note 7) L = 0.1mH I 22 A
AS
Avalanche Energy (Note 7) L = 0.1mH E 24 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 1.1 W
T = +25C P
A D
Steady State 119
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 75
Total Power Dissipation (Note 6) T = +25C P 1.6 W
A D
Steady State 78
Thermal Resistance, Junction to Ambient (Note 6)
RJA
t<10s 49
C/W
Thermal Resistance, Junction to Case (Note 6) R 13.5
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I - - 1 A V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage I - - 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1.4 - 2.0 V
V V = V , I = 250A
GS(TH) DS GS D
- - 20
V = 10V, I = 11A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
- - 24
V = 4.5V, I = 9A
GS D
Diode Forward Voltage - 0.70 1.0 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance - 1415 -
C
iss
V = 15V, V = 0V,
DS GS
Output Capacitance C - 119 - pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C - 82 -
rss
Gate Resistance R - 2.6 - V = 0V, V = 0V, f = 1.0MHz
g DS GS
Total Gate Charge (V = 4.5V) Q - 11.3 -
GS g
Total Gate Charge (V = 10V) Q - 25.1 -
GS g
nC
V = 15V, I = 12A
DS D
Gate-Source Charge - 3.5 -
Q
gs
Gate-Drain Charge - 3.6 -
Q
gd
Turn-On Delay Time - 4.8 -
t
D(ON)
Turn-On Rise Time - 16.5 -
t V = 15V, V = 10V,
R DD GS
ns
Turn-Off Delay Time - 26.1 -
t R = 1.25, R = 3
D(OFF) L G
Turn-Off Fall Time t - 5.6 -
F
Reverse Recovery Time t - 12.3 - ns
RR
I = 12A, di/dt = 500A/s
F
Reverse Recovery Charge Q - 10.4 - nC
rr
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMN3016LDN January 2015
Diodes Incorporated
www.diodes.com
Document number: DS37307 Rev. 2 - 2
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