DMN3016LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
0.6mm profile ideal for low profile applications
I max
D
2
V R max
(BR)DSS DS(ON)
PCB footprint of 4mm
T = +25C
A
Low Gate Threshold Voltage
12m @ V = 10V 10A Low On-Resistance
GS
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
16m @ V = 4.5V 8.5A
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance Case: U-DFN2020-6 Type E
(R ) and yet maintain superior switching performance, making it
DS(on) Case Material: Molded Plastic, Green Molding Compound. UL
ideal for high efficiency power management applications. Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Battery Management Application
Terminals: Finish NiPdAu over Copper leadframe. Solderable
Power Management Functions per MIL-STD-202, Method 208
DC-DC Converters Weight: 0.0065 grams (approximate)
D
U-DFN2020-6
Type E
6 D D 1
G
5 D D 2
4SS G3
S
Bottom View Pin Out Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN3016LFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel
DMN3016LFDE-13 U-DFN2020-6 Type E 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3016LFDE
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
Steady A 10
A
I
D
State 8
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 12
A
t<10s I A
D
9
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) I 2.5 A
S
Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 90 A
DM
Avalanche Current (Note 7) L = 0.1mH I 22 A
AR
Repetitive Avalanche Energy (Note 7) L = 0.1mH 24 mJ
E
AR
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
0.73
T = +25C
A
Total Power Dissipation (Note 5) P W
D
T = +70C 0.47
A
Steady state 171
Thermal Resistance, Junction to Ambient (Note 5) C/W
R
JA
t<10s 121
T = +25C 2.02
A
Total Power Dissipation (Note 6) W
P
D
T = +70C 1.30
A
Steady state 62
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s 42
C/W
Thermal Resistance, Junction to Case (Note 6) Steady state 9.3
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current I - - 1 A V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage I - - 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1.4 - 2.0 V V = V , I = 250 A
GS(th) DS GS D
- 8 12 V = 10V, I = 11A
GS D
m
Static Drain-Source On-Resistance R
DS (ON)
- 12 16
V = 4.5V, I = 9A
GS D
Forward Transfer Admittance - 32 - S
|Y | V = 5V, I = 12A
fs DS D
Diode Forward Voltage - 0.70 1.0 V
V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance - 1415 -
C
iss
V = 15V, V = 0V,
DS GS
Output Capacitance
C - 119 - pF
oss
f = 1.0MHz
Reverse Transfer Capacitance C - 82 -
rss
Gate resistance R - 2.6 3.2 V = 0V, V = 0V, f = 1.0MHz
g DS GS
Total Gate Charge (V = 4.5V) Q - 11.3 -
GS g
Total Gate Charge (V = 10V) Q - 25.1 -
GS g
nC
V = 15V, I = 12A
DS D
Gate-Source Charge Q - 3.5 -
gs
Gate-Drain Charge Q - 3.6 -
gd
Turn-On Delay Time - 4.8 -
t
D(on)
Turn-On Rise Time - 16.5 -
t V = 15V, V = 10V,
r DD GS
ns
Turn-Off Delay Time - 26.1 - R = 1.25, R = 3,
t L G
D(off)
Turn-Off Fall Time
t - 5.6 -
f
Reverse Recovery Time t - 12.3 - ns
rr
I = 12A, di/dt = 500A/s
F
Reverse Recovery Charge Q - 10.4 - nC
rr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25C
AR AR J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6 September 2013
DMN3016LFDE
Diodes Incorporated
www.diodes.com
Document number: DS35900 Rev. 2 - 2
NEW PRODUCT
ADVANCE INFORMATION