DMN3016LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications I max D 2 V R max (BR)DSS DS(ON) PCB footprint of 4mm T = +25C A Low Gate Threshold Voltage 12m V = 10V 10A Low On-Resistance GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16m V = 4.5V 8.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance Case: U-DFN2020-6 Type E (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Management Application Terminals: Finish NiPdAu over Copper leadframe. Solderable Power Management Functions per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.0065 grams (approximate) D U-DFN2020-6 Type E 6 D D 1 G 5 D D 2 4SS G3 S Bottom View Pin Out Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3016LFDE-7 U-DFN2020-6 Type E 3,000/Tape & Reel DMN3016LFDE-13 U-DFN2020-6 Type E 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3016LFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 10 A I D State 8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 12 A t<10s I A D 9 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2.5 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 90 A DM Avalanche Current (Note 7) L = 0.1mH I 22 A AR Repetitive Avalanche Energy (Note 7) L = 0.1mH 24 mJ E AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 0.73 T = +25C A Total Power Dissipation (Note 5) P W D T = +70C 0.47 A Steady state 171 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 121 T = +25C 2.02 A Total Power Dissipation (Note 6) W P D T = +70C 1.30 A Steady state 62 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 6) Steady state 9.3 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.4 - 2.0 V V = V , I = 250 A GS(th) DS GS D - 8 12 V = 10V, I = 11A GS D m Static Drain-Source On-Resistance R DS (ON) - 12 16 V = 4.5V, I = 9A GS D Forward Transfer Admittance - 32 - S Y V = 5V, I = 12A fs DS D Diode Forward Voltage - 0.70 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 1415 - C iss V = 15V, V = 0V, DS GS Output Capacitance C - 119 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 82 - rss Gate resistance R - 2.6 3.2 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q - 11.3 - GS g Total Gate Charge (V = 10V) Q - 25.1 - GS g nC V = 15V, I = 12A DS D Gate-Source Charge Q - 3.5 - gs Gate-Drain Charge Q - 3.6 - gd Turn-On Delay Time - 4.8 - t D(on) Turn-On Rise Time - 16.5 - t V = 15V, V = 10V, r DD GS ns Turn-Off Delay Time - 26.1 - R = 1.25, R = 3, t L G D(off) Turn-Off Fall Time t - 5.6 - f Reverse Recovery Time t - 12.3 - ns rr I = 12A, di/dt = 500A/s F Reverse Recovery Charge Q - 10.4 - nC rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 September 2013 DMN3016LFDE Diodes Incorporated www.diodes.com Document number: DS35900 Rev. 2 - 2 NEW PRODUCT ADVANCE INFORMATION