DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production I D V R (BR)DSS DS(on) Low On-Resistance T = +25C C Fast Switching Speed 37.8A 12m V = 10V GS Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 32.8A 16m V = 4.5V Halogen and Antimony Free. Green Device (Note 3) GS Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: TO252 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Matte Tin Finish Annealed over Copper Leadframe. Backlighting e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (Approximate) Power Management Functions D D TO252 G D G S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Notes 4) Product Case Packaging DMN3016LK3-13 TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3016LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 12.4 A A I D State 10 T = +70C A Steady T = +25C 37.8 C Continuous Drain Current (Note 6) V = 10V I A GS D State 30.3 T = +70C C T = +25C 17 A t<10s A I D 13.6 T = +70C A Maximum Body Diode Continuous Current 2 A IS Pulsed Drain Current (10s pulse, duty cycle = 1%) 90 A I DM Avalanche Current (Note 7) L = 0.1mH 22 A I AS Avalanche Energy (Note 7) L = 0.1mH E 24 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.6 A Total Power Dissipation (Note 5) P W D T = +70C 1.0 A Steady State 75 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 34 T = +25C 2.8 A Total Power Dissipation (Note 6) P W D 1.8 T = +70C A Steady State 46 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 24 C/W Thermal Resistance, Junction to Case (Note 6) 3.1 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG 2 of 7 DMN3016LK3 November 2014 Diodes Incorporated www.diodes.com Document Number DS37206 Rev. 4 - 2 ADVANCED INFORMATION NEW PRODUCT