DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance I D Low Input Capacitance V R (BR)DSS DS(ON) max T = +25C A Fast Switching Speed 10.8A 12m V = 10V <1.1mm Package Profile Ideal for Thin Applications GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16m V = 4.5V 9.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching Case: POWERDI5060-8 DS(ON) performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Analog Switch Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI5060-8 D S D Pin1 S D D S G D G S Top View Internal Schematic Top View Bottom View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN3016LPS-13 POWERDI5060-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3016LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 10.8 A I A D State 8.5 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 15.5 A t<10s A I D 12.3 T = +70C A Steady T = +25C 9.5 A I A D State 7.5 TA = +70C Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 13.5 A t<10s A I D 10.8 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 70 A DM Avalanche Current (Note 7) L = 0.1mH I 22 A AS Avalanche Energy (Note 7) L = 0.1mH E 24 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.18 W P D Steady State 109 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 49 C/W Total Power Dissipation (Note 6) 2.75 W P D Steady State 46 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 24 C/W Thermal Resistance, Junction to Case (Note 6) 4.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.4 - 2.0 V V = V , I = 250A GS(th) DS GS D - 8.5 12 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS (ON) - 10.5 16 V = 4.5V, I = 20A GS D Diode Forward Voltage V - 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C - 1415 - pF iss V = 15V, V = 0V, DS GS Output Capacitance - 119 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 82 - pF C rss Gate Resistance - 3.0 - R V = 0V, V = 0V, f = 1.0MHz g DS GS - 11.3 - nC Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q - 25.1 - nC GS g V = 15V, I = 12A DS D Gate-Source Charge Q - 3.5 - nC gs Gate-Drain Charge Q - 3.6 - nC gd Turn-On Delay Time t - 4.8 - ns D(ON) Turn-On Rise Time t - 16.5 - ns R V = 15V, V = 10V, DD GS Turn-Off Delay Time - 26.1 - ns R = 1.25, R = 3 tD(OFF) L G Turn-Off Fall Time - 5.6 - ns t F Reverse Recovery Time - 12.3 - ns t RR I = 12A, di/dt = 500A/s F Reverse Recovery Charge - 10.4 - nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 February 2015 DMN3016LPS Diodes Incorporated www.diodes.com Document number: DS35646 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION