DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = 25C A 10.3 A 12m V = 10V Fast Switching Speed GS 30V 9.3 A 16m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(on) Case: SO-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish Matte Tin annealed over Copper leadframe. DC-DC Converters e3 Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (approximate) D SO-8 S D S D Pin1 G S D G D S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN3016LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3016LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 10.3 A I A D State 8.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 13.4 A t<10s A I D 10.6 T = +70C A Steady T = +25C 9.3 A I A D State 7.3 TA = +70C Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 12.0 A t<10s A I D 9.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 80 A DM Avalanche Current (Note 7) L = 0.1mH I 22 A AS Avalanche Energy (Note 7) L = 0.1mH E 25 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.5 W P D Steady State 82 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 48 C/W Total Power Dissipation (Note 6) 2.0 W P D Steady State 60 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case R 6.4 C/W JC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.3 2.5 V V = V , I = 250A GS(th) DS GS D 8 12 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) 12 16 VGS = 4.5V, ID = 10A Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1415 C iss V = 15V, V = 0V, DS GS Output Capacitance 119 pF C oss f = 1.0MHz Reverse Transfer Capacitance 82 C rss Gate resistance 2.6 3.2 R V = 0V, V = 0V, f = 1.0MHz g DS GS 11.3 Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q 25.1 GS g nC V = 15V, I = 12A DS D Gate-Source Charge Q 3.5 gs Gate-Drain Charge Q 3.6 gd Turn-On Delay Time t 4.8 D(on) Turn-On Rise Time 16.5 tr V = 15V, V = 10V, DD GS ns Turn-Off Delay Time 26.1 R = 1.25, R = 3, t L G D(off) Turn-Off Fall Time 5.6 t f Reverse Recovery Time 8.5 ns T rr I = 12A, di/dt = 500A/s F Reverse Recovery Charge 7.0 nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting T = +25C. A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 July 2014 DMN3016LSS Diodes Incorporated www.diodes.com Document number: DS36937 Rev.2 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT