DMN3023L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage Low Input Capacitance 25m V = 10V 6.2A GS Fast Switching Speed 30V 28m V = 4.5V 5.8A GS Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SOT23 resistance (R ) and yet maintain superior switching DS(ON) Cas e Mat erial: Molded P las t ic, Green Molding Com pound. performance, making it ideal for high-efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Load Switch Leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Weight: 0.009 grams (Approximate) SOT23 D ESD PROTECTED G S Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3023L-7 SOT23 3,000/Tape & Reel DMN3023L-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. S e e h ttp: // ww w. dio des .com /q uali t y/le ad fre e. htm l fo r m or e in form a tion a bou t Di od es Inco rp or ate ds defi nitio ns o f H alog en - and Antimony-free,Gree and Lead-free. 3. Halogen- and Antimony-f ree Gr ee n pr odu cts are d efin ed as t hos e which c ont ain < 90 0ppm br om ine, < 90 0p pm chl orin e (< 15 00 ppm t otal B r + Cl ) a nd <1000ppm antimony compounds. 4. For packaging details, go to our website at DMN3023L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.2 A Continuous Drain Current (Note 6) V = 10V I A GS D State 4.9 T = +70C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 44 A I DM Maximum Body Diode Forward Current (Note 6) 1.5 A I S Avalanche Current (Note 7) L = 0.1mH 17.5 A I AS Avalanche Energy (Note 7) L = 0.1mH 15.2 mJ E AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.9 A Total Power Dissipation (Note 5) W P D T = +70C 0.6 A Steady state 144 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 103 T = +25C 1.3 A Total Power Dissipation (Note 6) W P D 0.8 T = +70C A Steady state 97 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 70 C/W Thermal Resistance, Junction to Case (Note 6) 24 RJC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 24V, V = 0V DSS DS GS Gate-Body Leakage I 10 A V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.8 1.8 V V = V , I = 250A GS(TH) DS GS D V = 10V, I = 4.0A 25 GS D Static Drain-Source On-Resistance 28 m R V = 4.5V, I =3.5A DS(ON) GS D 68 V = 2.5V, I =2.5A GS D Source-Drain Diode Forward Voltage V 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 873 pF iss V = 15V, V = 0V DS GS Output Capacitance 121 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 67 pF rss Gate Resistance 77 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 18.4 nC GS g 8.3 nC Total Gate Charge (V = 4.5V) Q GS g V = 15V, I = 4A DS D Gate-Source Charge 2.2 nC Qgs Gate-Drain Charge 2.5 nC Q gd Turn-On Delay Time 17 ns tD(ON) Turn-On Rise Time 18 ns t R V = 15V, V = 10V, DD GS R = 15, R = 6 Turn-Off Delay Time 231 ns L G tD(OFF) Turn-Off Fall Time 70 ns t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3023L August 2015 Diodes Incorporated www.diodes.com Document number: DS37248 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION