DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low R ensures on state losses are minimized DS(ON) I D Max V R (BR)DSS DS(ON) Max Small form factor thermally efficient package enables higher T = +25C A density end products Occupies just 33% of the board area occupied by SO-8 enabling 18m V = 10V 7.5A GS smaller end product 30V 100% Unclamped Inductive Switch (UIS) test in production 6.1A 28m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: POWERDI3333-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram Backlighting Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions DC-DC Converters Weight: 0.072 grams (approximate) POWERDI3333-8 8 1 Pin 1 S S 7 S 2 G 6 3 D 5 4 D D D Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3025LFG-7 POWERDI3333-8 2000/Tape & Reel DMN3025LFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3025LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 7.5 A I D State 6.1 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 10 A t<10s I A D 7.8 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) I 2.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 60 A DM Avalanche Current (Note 6) L = 0.1mH I 14 A AR Avalanche Energy (Note 6) L = 0.1mH 10 mJ E AR Thermal Characteristics Characteristic Symbol Value Units = +25C 2.0 T A Total Power Dissipation (Note 5) P W D 1.3 T = +70C A Steady State 61 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 37 C/W Thermal Resistance, Junction to Case R 6.4 JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage 1 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 2.0 V V V = V , I = 250 A GS(th) DS GS D 14 18 V = 10V, I = 7.8A GS D m Static Drain-Source On-Resistance R DS (ON) 23 28 V = 4.5V, I = 7.0A GS D Forward Transfer Admittance 9 - S Y V = 10V, I = 7.8A fs DS D Diode Forward Voltage V 0.70 1.0 V V = 0V, I = 6.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 605 iss V = 15V, V = 0V, DS GS Output Capacitance C 74 pF oss f = 1.0MHz Reverse Transfer Capacitance C 58 rss Gate resistance R 1.5 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q 5.3 GS g 11.6 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 7.8A DS D Gate-Source Charge 2 Q gs Gate-Drain Charge 2.4 Q gd Turn-On Delay Time t 3.8 D(on) Turn-On Rise Time t 4.1 V = 15V, V = 4.5V, r DD GS ns Turn-Off Delay Time t 17.9 R = 2.4, R = 1 , D(off) L G Turn-Off Fall Time t 4.7 f Reverse Recovery Time t 5.5 ns rr I = 12A, di/dt = 500A/s F Reverse Recovery Charge Q 2.6 nC rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. I and E rating are based on low frequency and duty cycles to keep T = +25C AR AR J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 6 November 2012 DMG3025LFG Diodes Incorporated www.diodes.com Document number: DS35642 Rev. 5 2 NEW PRODUCT