DMN3026LVT 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D V R (BR)DSS DS(on) max T = +25C Low On-Resistance A Fast Switching Speed 23m V = 10V 6.6A GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m V = 4.5V 5.8A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) Case: TSOT26 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish annealed over Copper leadframe. Power management functions Solderable per MIL-STD-202, Method 208 e3 Backlighting Weight: 0.013 grams (approximate) TSOT26 D 1 6 D D D 2 5 3 4 G S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN3026LVT-7 TSOT26 3,000/Tape & Reel DMN3026LVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3026LVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.6 A A I D State 5.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 8.5 A t<10s I A D 6.8 T = +70C A Maximum Body Diode Forward Current (Note 6) I 3.0 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 35 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 5) W P D 0.8 T = +70C A Steady state 100 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 60 C/W 1.5 T = +25C A Total Power Dissipation (Note 6) W P D 1.0 T = +70C A Steady state 83 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 6) 14.5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMinTypMaxUnit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.0 1.5 2.0 V V V = V , I = 250A GS(th) DS GS D 19 23 V = 10V, I = 6.5A GS D Static Drain-Source On-Resistance m R DS(ON) 22 30 V = 4.5V, I = 6.0A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 643 iss V = 15V, V = 0V DS GS Output Capacitance C 65 pF oss f = 1.0MHz Reverse Transfer Capacitance C 49 rss Gate Resistance R 2.5 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 5.7 GS g 12.5 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 4.0A DS D Gate-Source Charge 1.7 Q gs Gate-Drain Charge 1.8 Q gd Turn-On Delay Time 2.2 t D(on) Turn-On Rise Time 2.5 t V = 10V, V = 15V, R = 6.0 , r GS DD G nS Turn-Off Delay Time t 12.1 I = 6.5A D(off) D Turn-Off Fall Time t 3.0 f Body Diode Reverse Recovery Time t 6.5 nS I = 6.5A, dI/dt = 100A/s rr F Body Diode Reverse Recovery Charge Q 1.7 nC I = 6.5A, dI/dt = 100A/s rr F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 April 2014 DMN3026LVT Diodes Incorporated www.diodes.com Document number: DS36813 Rev. 3 - 2 ADVANCE INFORMATION ADVANCED INFORMATION