DMN3027LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low R ensures on state losses are minimized DS(ON) I D BV R max DSS DS(ON) T = +25C A Small form factor thermally efficient package enables higher density end products 8.0A 18.6m V = 10V GS 30V Occupies just 33% of the board area occupied by SO-8 enabling 26.5m V = 4.5V 6.5A GS smaller end product 100% UIS (Avalanche) Rated 100% R Tested g Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) This new generation MOSFET is designed to minimize the on-state Halogen and Antimony Free. Green Device (Note 3) resistance (R ) and yet maintain superior switching performance, DS(ON) Qualified to AEC-Q101 Standards for High Reliability making it ideal for high-efficiency power management applications. Applications Mechanical Data Backlighting Case: POWERDI 3333-8 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. UL Power Management Functions Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) POWERDI 3333-8 D Pin 1 S S S G G D D S D D Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN3027LFG-7 POWERDI 3333-8 2,000 / Tape & Reel DMN3027LFG-13 POWERDI 3333-8 3,000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN3027LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 25 V V GSS Steady T = +25C 5.3 A Continuous Drain Current (Note 5) V = 10V I A GS D State 4.2 T = +70C A Steady T = +25C 8.0 A A Continuous Drain Current (Note 6) V = 10V I GS D State 6.3 T = +70C A T = +25C 9.5 A A Continuous Drain Current (Note 6) V = 10V t 10s I GS D 7.7 T = +70C A Steady T = +25C 6.5 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 4.9 T = +70C A T = +25C 7.8 A A Continuous Drain Current (Note 6) V = 4.5V t 10s I GS D 6.2 T = +70C A Pulsed Drain Current (Note 7) I 70 A DM Avalanche Current (Notes 7 & 8) I 18 A AR Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH E 16 mJ AR Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) P 1.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 130.6 C/W A JA Power Dissipation (Note 6) P 2.07 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 62.5 C/W A JA Power Dissipation (Note 6) t 10s 3.0 W P D 43.8 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) t 10s R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 2 x 2 FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AR AR J Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 100 nA V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 0.9 1.2 1.8 V V = V , I = 250A GS(TH) DS GS D - 13.5 18.6 VGS = 10V, ID = 10A Static Drain-Source On-Resistance R m DS(ON) - 22 26.5 V = 4.5V, I = 7.5A GS D Diode Forward Voltage - 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance - 580 - C iss V = 15V, V = 0V, DS GS Output Capacitance - 110 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 70 - C rss Gate Resistance - 2.0 3.0 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge V = 4.5V Q - 5.3 - V = 4.5V, V = 15V, I = 10A GS g GS DS D Total Gate Charge V = 10V Q - 11.3 - GS g nC V = 10V, V = 15V, GS DS Gate-Source Charge Q - 1.9 - gs I = 10A D Gate-Drain Charge Q - 1.9 - gd Turn-On Delay Time - 4.4 - ns tD(ON) Turn-On Rise Time - 4.6 - ns t V = 10V, V = 15V, R GS DS Turn-Off Delay Time - 19.5 - ns R = 15, R = 6 t L G D(OFF) Turn-Off Fall Time - 5.8 - ns t F Notes: 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 October 2015 DMN3027LFG www.diodes.com Diodes Incorporated Document number: DS38020 Rev. 3 - 2 NEW PRODUCT ADVANCE INFORMATION