DMN3030LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 18m V = 10V Fast Switching Speed GS 9.0A Low Input/Output Leakage 30V 30m V = 4.5V GS 7.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance Case: SO-8 (R ) yet maintain superior switching performance, making it ideal Case Material: Molded Plastic, Green Molding Compound. DS(on) for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Power Management Functions Terminals: FinishMatte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (Approximate) D SO-8 S D S D G S D G D S Top View Top View Equivalent circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3030LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN3030LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage V V 25 GSS Drain Current (Note 6) Steady T = +25C 9.0 A I A D State 6.75 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 40 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.7 W P D Thermal Resistance, Junction to Ambient (Note 5) 73 C/W R JA Total Power Dissipation (Note 6) P 2.5 W D Thermal Resistance, Junction to Ambient (Note 6) R 50 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 30V, V = 0V DSS DS GS 100 nA V = 20V, V = 0V GS DS Gate-Source Leakage I GSS A 1 V = 25V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 2.1 V V = V , I = 250A GS(th) DS GS D 15.7 18 V = 10V, I = 9A GS D Static Drain-Source On-Resistance R m DS (ON) 26.4 30 V = 4.5V, I = 7A GS D Forward Transconductance 5.8 S g V = 10V, I = 9A fs DS D Diode Forward Voltage 0.5 0.7 1.2 V V V = 0V, I = 2.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 741 pF C iss V = 15V, V = 0V DS GS Output Capacitance C 124 pF oss f = 1.0MHz Reverse Transfer Capacitance C 95 pF rss Gate Resistance R 0.30 0.88 2.5 V = 0V, V = 0V, f = 1.0MHz G DS GS SWITCHING CHARACTERISTICS (Note 8) 7.6 12 V = 15V, V = 4.5V, I = 9A DS GS D Total Gate Charge Q g 16.7 25 nC Gate-Source Charge 1.9 Q V = 15V, V = 10V, I = 9A gs DS GS D Gate-Drain Charge 5.2 Q gd Turn-On Delay Time t 4.0 d(on) Rise Time t 4.4 r V = 10V, V = 15V, GS DS ns Turn-Off Delay Time t 23.0 R = 15, R = 6 d(off) L G Fall Time t 9.4 f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN3030LSS May 2018 Diodes Incorporated www.diodes.com Document number: DS31261 Rev. 13 - 2