DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D V R (BR)DSS DS(on) max T = +25C A Low Input Capacitance 29m V = 10V 5.6A GS Fast Switching Speed 30V 35m V = 4.5V 4.8A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching Mechanical Data DS(ON) performance, making it ideal for high efficiency power management Case: SOT223 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See diagram below DC Motor Control Terminals: Finish - Matte Tin annealed over Copper lead frame. DC-AC Inverters Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (approximate) D SOT223 G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4) Part Number Qualification Case Packaging DMN3032LE-13 Standard SOT223 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3032LE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 5.6 A A I D 4.1 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 15.4 C I A D 12.1 T = +70C C Maximum Continuous Body Diode Forward Current (Note 5) I 1.5 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 25 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units TA = +25C 1.8 Total Power Dissipation (Note 5) P W D TA = +70C 1.1 Thermal Resistance, Junction to Ambient (Note 5) 69 C/W R JA Total Power Dissipation (Note 5) P 14 W D Thermal Resistance, Junction to Case (Note 5) 8.7 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 30V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1 2 V V V = V , I = 250A GS(th) DS GS D 22 29 V = 10V, I = 3.2A GS D Static Drain-Source On-Resistance R m DS (ON) 27 35 V = 4.5V, I = 2.8A GS D Forward Transfer Admittance Y 7 S V = 5V, I = 5.8A fs DS D Diode Forward Voltage V 0.7 1.5 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) 498 Input Capacitance C iss V = 15V, V = 0V DS GS 52 Output Capacitance C pF oss f = 1MHz 45 Reverse Transfer Capacitance C rss Gate Resistnace R 2.2 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 11.3 Q g Gate-Source Charge 1.4 nC Q V = 15V, V = 10V, I = 5.8A gs DS GS D Gate-Drain Charge 2.1 Q gd 2.3 Turn-On Delay Time t D(on) 3.9 Turn-On Rise Time t r V = 15V, V = 10V, DS GS ns 10 R = 2.6, R = 3 Turn-Off Delay Time t L G D(off) 1.9 Turn-Off Fall Time t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. 2 of 6 May 2014 DMN3032LE Diodes Incorporated www.diodes.com Document number: DS36695 Rev. 2 - 2 NEW PRODUCT