DMN3032LFDBQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
100% Unclamped Inductive Switching Ensures More Reliable
I Max
D
V R Max
(BR)DSS DS(ON)
T = +25C and Robust Application
A
Low On-Resistance Minimizes Power Losses
30m @ V = 10V 6.2A
GS
Low Gate Charge Minimizes Switching Losses
30V
42m @ V = 4.5V 5.2A
GS Small Form Factor Low Profile Package Increased Power
Density
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
Case: U-DFN2020-6
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound.
PPAP and ideal for use in: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Body Control Electronics Terminals: Finish NiPdAu Annealed over Copper Leadframe.
e4
Solderable per MIL-STD-202, Method 208
Power Management Functions
Terminals Connections: See Diagram Below
DC-DC Converters
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
D1 D2
S2
G2
D2
D1
D1
G1 G2
D2
G1
S1
S1 S2
Pin1
Bottom View
Internal Schematic
Ordering Information (Notes 4 & 5)
Part Number Case Packaging
DMN3032LFDBQ-7 U-DFN2020-6 3,000/Tape & Reel
DMN3032LFDBQ-13 U-DFN2020-6 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN3032LFDBQ
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 6.2
A
Continuous Drain Current (Note 7) V = 10V I A
GS D
State 5.0
T = +75C
A
Maximum Continuous Body Diode Forward Current (Note 7) 2 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 25 A
I
DM
Avalanche Current (Note 8) L = 0.1mH 12 A
I
AS
Avalanche Energy (Note 8) L = 0.1mH 10 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P 1.0 W
D
Steady state 127
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 75
Total Power Dissipation (Note 7) P 1.7 W
D
Steady state 72
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 43
C/W
Thermal Resistance, Junction to Case (Note 7) 9
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage 30 - - V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C - - 1.0 A
J I V = 30V, V = 0V
DSS DS GS
Zero Gate Voltage Drain Current T = +150C (Note 10) - - 100 A
J I V = 30V, V = 0V
DSS DS GS
Gate-Source Leakage - - 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage V 1.0 1.5 2.0 V V = V , I = 250A
GS(TH) DS GS D
25 30 V = 10V, I = 5.8A
GS D
Static Drain-Source On-Resistance - m
R
DS(ON)
30 42 V = 4.5V, I = 4.8A
GS D
Diode Forward Voltage V - 0.75 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
- -
Input Capacitance C 500 pF
iss
V = 15V, V = 0V,
DS GS
- -
Output Capacitance C pF
oss 52
f = 1.0MHz
- -
Reverse Transfer Capacitance pF
C 44
rss
Gate Resistance - 2.3 -
R V = 0V, V = 0V, f = 1MHz
g DS GS
- 5.0 - nC
Total Gate Charge (V = 4.5V) Q
GS g
- 10.6 - nC
Total Gate Charge (V = 10V) Q
GS g
V = 15V, I = 5.8A
DS D
Gate-Source Charge - 1.3 - nC
Q
gs
- 1.8 -
Gate-Drain Charge Q nC
gd
2.2
Turn-On Delay Time t - - ns
D(ON)
2.6
Turn-On Rise Time t - - ns
R V = 15V, V = 10V,
DD GS
9.7
Turn-Off Delay Time t - - ns R = 2.6, R = 3
D(OFF) L G
2.0
Turn-Off Fall Time t - - ns
F
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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DMN3032LFDBQ October 2015
Diodes Incorporated
www.diodes.com
Document number: DS37981 Rev. 2 - 2