DMN30H4D0L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage I D V R (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 4 V = 10V 0.25A GS 300V Small Surface Mount Package 4 V = 4.5V 0.25A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management Case: SOT23 applications. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Description and Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Power management functions leadframe). Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.008 grams (approximate) Memories, Transistors, etc D D G G S S Top View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN30H4D0L-7 SOT23 3,000/Tape & Reel DMN30H4D0L-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN30H4D0L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 300 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 0.25 Continuous Drain Current (Note 6) V = 10V I A GS D State 0.20 T = +70C A 2 A Pulsed Drain Current (10 s pulse, duty cycle 1%) I DM Maximum Body Diode Continuous Current (Note 6) I 0.8 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 0.31 Total Power Dissipation W P D (Note 6) 0.47 (Note 5) 377 Thermal Resistance, Junction to Ambient R JA (Note 6) 255 C/W (Note 6) Thermal Resistance, Junction to Case 81 R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 300 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 240V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250 A GS(th) DS GS D 2.1 4 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R 2.1 4 V = 4.5V, I = 0.2A DS(ON) GS D 3.8 6 V = 2.7V, I = 0.1A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 0.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 187.3 iss V = 25V, V = 0V, DS GS Output Capacitance 11.7 pF C oss f = 1.0MHz Reverse Transfer Capacitance 8.7 C rss Total Gate Charge 7.6 Q g V = 192V, V = 10V, DS GS Gate-Source Charge 0.5 Q nC gs I = 0.5A D 3.3 Gate-Drain Charge Q gd 4.9 Turn-On Delay Time t D(on) 4.7 Turn-On Rise Time t r V = 60V, R =200 DS L nS 25.8 V = 10V, R = 25 Turn-Off Delay Time t GS G D(off) 17.5 Turn-Off Fall Time t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 February 2014 DMN30H4D0L Diodes Incorporated www.diodes.com Document number: DS36313 Rev. 2 - 2 NEW PRODUCT