DMN3150LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT323 R < 88m V = 4.5V Case Material: Molded Plastic, Green Molding Compound. DS(ON) GS R < 138m V = 2.5V UL Flammability Classification Rating 94V-0 DS(ON) GS Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals: Finish - Matte Tin Annealed over Alloy 42 Fast Switching Speed Leadframe. Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Terminal Connections: See Diagram Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT323 D D G G S S Pin Configuration Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3150LW-7 SOT323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3150LW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage 28 V V DSS Gate-Source Voltage 12 V V GSS Drain Current (Note 5) T = +25C A 1.6 A I D 1.2 T = +70C A Drain Current (Note 5) Pulsed 6.4 A I DM Body-Diode Continuous Current (Note 5) 1.5 A IS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 350 mW D 357 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 28 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 800 nA I V = 28V, V = 0V DSS DS GS 80 V = 12V, V = 0V GS DS Gate-Body Leakage I nA GSS 800 V = 19V, V = 0V GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.62 0.94 1.4 V V = V , I = 250A GS(TH) DS GS D 73 88 V = 4.5V, I = 1.6A GS D Static Drain-Source On-Resistance R m DS(ON) 115 138 V = 2.5V, I = 1.2A GS D Forward Transconductance 5.4 S Y V = 5V, I = 2.7A fs DS D Source-Drain Diode Forward Voltage 1.16 V V V = 0V, I = 1.5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 305 pF C iss V = 5V, V = 0V DS GS Output Capacitance C 74 pF oss f = 1.0MHz Reverse Transfer Capacitance C 48 pF rss 2 Notes: 5. Device mounted on 1in FR-4 PCB on 2oz. Copper. t 10 sec. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 5 DMN3150LW January 2016 Diodes Incorporated www.diodes.com Document number: DS31514 Rev. 2 - 2