DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low Package Profile, 0.42mm Maximum Package Height D V R max (BR)DSS DS(ON) T = +25C 0.62mm x 0.62mm Package Footprint A Low On-Resistance 1.5 V = 4.5V GS Very Low Gate Threshold Voltage, 1.0V max 2.0 V = 2.5V GS 30V 0.22A ESD Protected Gate 3.0 V = 1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.5 V = 1.5V GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: X2-DFN0606-3 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish NiPdAu over Copper leadframe e4 Solderable per MIL-STD-202, Method 208 General Purpose Interfacing Switch Weight: 0.001 grams (approximate) Power Management Functions Analog Switch ESD PROTECTED Top View Bottom View Equivalent Circuit Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN31D5UFZ-7B X2-DFN0606-3 10K/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN31D5UFZ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady A 220 Continuous Drain Current (Note 5) I mA D State 150 T = +85C A Pulsed Drain Current (Note 6) 500 mA I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) Steady state P 393 mW D Thermal Resistance, Junction to Ambient (Note 5) Steady state 318 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 24V, V = 0V C DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 1.0 V V V = V , I = 250 A GS(th) DS GS D 1.5 V = 4.5V, I = 100mA GS D 2.0 V = 2.5V, I = 50mA GS D Static Drain-Source On-Resistance 3.0 R V = 1.8V, I = 20mA DS(ON) GS D 4.5 V = 1.5V, I = 10mA GS D 2.8 V = 1.2V, I = 1mA GS D Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 10mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 22.2 pF iss V = 15V, V = 0V, DS GS Output Capacitance C 2.9 pF oss f = 1.0MHz Reverse Transfer Capacitance C 2.2 pF rss Total Gate Charge Q 0.35 nC g V = 4.5V, V = 15V, GS DS Gate-Source Charge 0.05 nC Q gs I = 200mA D Gate-Drain Charge 0.02 nC Q gd Turn-On Delay Time 3.1 ns t D(on) Turn-On Rise Time t 2.0 ns r V = 10V, V = 4.5V, DD GS R = 6 , I = 200mA Turn-Off Delay Time t 20 ns G D D(off) Turn-Off Fall Time t 6.9 ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 June 2014 DMN31D5UFZ Diodes Incorporated www.diodes.com Document number: DS36843 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT