DMN3300U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R Package (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 0.15 V = 4.5V 2A GS Fast Switching Speed 0.2 V = 2.5V 1.6A GS 30V SOT23 Small Surface Mount Package 1.4A 0.25 V = 1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 1.2A 0.3 V = 1.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(on) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin annealed over Copper Power Management Functions leadframe. Solderable per MIL-STD-202, Method 208 Battery Operated Systems and Solid-State Relays Weight: 0.008 grams (approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc SOT23 D GS Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3300U-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3300U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 1.5 A Continuous Drain Current (Note 5) V = 4.5V I A GS D State 1.2 T = +70C A T = +25C Steady A 2.0 A Continuous Drain Current (Note 6) V = 4.5V I GS D State 1.6 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 8 A I DM Maximum Body Diode Continuous Current (Note 6) I 1.6 A S Thermal Characteristics Characteristic Symbol Value Units (Note 5) 0.7 Total Power Dissipation W P D (Note 6) 1.3 (Note 5) 176 Thermal Resistance, Junction to Ambient R JA (Note 6) 102 C/W (Note 6) Thermal Resistance, Junction to Case 45 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 37 V V = 0V, I = 100A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1 V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 4.5A GS D 100 150 140 200 V = 2.5V, I = 3.5A GS D Static Drain-Source On-Resistance R m DS (ON) 185 250 V = 1.8V, I = 1.5A GS D 240 300 V = 1.5V, I = 0.5A GS D Forward Transfer Admittance Y 5 S V =5V, I = 2.4A fs DS D Diode Forward Voltage V 0.8 1.1 V V = 0V, I = 0.5A SD GS DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 193 pF iss V = 10V, V = 0V DS GS Output Capacitance C 35 pF oss f = 1.0MHz Reverse Transfer Capacitance C 23 pF rss Turn-On Delay Time t 7 d(on) Rise Time 24 t V = 10V, R = 10 r DD L ns Turn-Off Delay Time 24 I = 1A, V = 4.5V, R = 6 t D GEN G d(off) Fall Time 12 t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing 2 of 5 September 2012 DMN3300U Diodes Incorporated www.diodes.com Document number: DS31181 Rev. 5 - 2 NEW PRODUCT