A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits Low V can be driven directly from a battery GS(th), I Max (Note 5) D V Max R Low R (BR)DSS DS(on) DS(on) T = 25C A Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free.Gree Device (Note 2) 0.94A 460m V = 4.5V GS 30V ESD Protected Gate 2kV 560m V = 2.5V 0.85A GS Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SOT23 This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load switch Terminals: Finish-Matte Tin. Portable applications Weight: 0.08 grams (approximate) Power Management Functions Drain SOT23 D Body Diode Gate Gate Protection Source G S Diode Equivalent Circuit ESD PROTECTED TO 2kV Top View Top View Pin-Out Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3730U-7 N3U 7 8 3,000 Notes: 1. No purposefully added lead 2. Diodes Inc sGree policy can be found on our website at A Product Line of Diodes Incorporated DMN3730U Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 8 V V GSS T = 25C (Note 5) A 0.94 Steady Continuous Drain Current T = 85C (Note 5) I 0.68 A A D State 0.75 T = 25C (Note 4) A Pulsed Drain Current (Note 6) 10 A I DM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit (Note 4) 0.45 W Power Dissipation P D (Note 5) 0.71 W Thermal Resistance, Junction to Ambient (Note 4) 275 C/W R JA (Note 5) 177 C/W Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. Thermal Characteristics 100 100 R DS(ON) Single Pulse I (A) I (A) D Limited D 90 Rthja = 176C/W P = 100s W P = 1ms Rthja(t) = Rthja*r(t) W T - T = P*Rthja (t) JA 10 80 I (A) D P = 10ms W 70 I (A) D 1 60 P = 100ms W 50 I (A) DC D 40 0.1 I (A) D P = 10s W 30 I (A) D P = 1s W 20 0.01 T , (Max) = 150C J T = 25C A 10 Single Pulse 0.001 0 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 V , DRAIN-SOURCE VOLTAGE T1, PULSE DURATION SECTION (sec) DS Fig. 1 Single Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area 2 of 7 July 2011 DMN3730U Diodes Incorporated www.diodes.com Datasheet number: DS35308 Rev. 2 - 2 P(pk), PEAK TRANSIENT POWER (W) I, DRAIN CURRENT (A) D