DMN3731U 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low V can be Driven Directly from a Battery GS(TH), I Max D BV Max R DSS DS(ON) Low R DS(ON) T = +25C A ESD Protected Gate 0.9A 460m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V Halogen and Antimony Free. Green Device (Note 3) 560m V = 2.5V 0.83A GS Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT23 (R ) yet maintain superior switching performance, which makes it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminals: FinishMatte Tin Annealed over Copper Leadframe. Portable Applications e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) SOT23 D S G Top View Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per Reel DMN3731U-7 BR3 7 3,000 DMN3731U-13 BR3 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN3731U Maximum Ratings ( T = 25C unless otherwise specified) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C A 0.9 Continuous Drain Current (Note 6) V = 4.5V I A GS D State 0.7 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.55 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 3 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.4 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 303 C/W JA Total Power Dissipation (Note 6) 0.58 W PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 215 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = 25C unless otherwise specified) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 3 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.45 0.95 V V = V , I = 250A GS(TH) DS GS D 271 460 V = 4.5V, I = 200mA GS D Static Drain-Source On-Resistance 288 560 m R V = 2.5V, I = 100mA DS(ON) GS D 324 730 V = 1.8V, I = 75mA GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 300mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 73 pF C iss V = 25V, V = 0V, DS GS 7.2 Output Capacitance C pF oss f = 1.0MHz 5 Reverse Transfer Capacitance C pF rss 902 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 5.5 Total Gate Charge Q nC g V = 4.5V, V = 15V, GS DS 0.8 Gate-Source Charge Q nC gs I = 1A D 1.4 Gate-Drain Charge Q nC gd Turn-On Delay Time 2.5 ns t D(ON) Turn-On Rise Time 3.1 ns t V = 10V, I = 1A R DS D Turn-Off Delay Time 477 ns V = 10V, R = 6 t GS g D(OFF) Turn-Off Fall Time 123 ns t F Reverse Recovery Time t 59 ns RR I = 1A, di/dt = 100A/s F Reverse Recovery Charge Q 25 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN3731U January 2019 Diodes Incorporated www.diodes.com Datasheet number: DS40980 Rev. 3 - 2