DMN3900UFA 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I 0.4mm ultra low profile package for thin application D V R (BR)DSS DS(on) 2 T = +25C A 0.48mm package footprint, 16 times smaller than SOT23 760m V = 4.5V 0.65A GS Low V can be driven directly from a battery GS(th), 30V 930m V = 2.5V 0.58A GS Low R DS(on) 1500m V = 1.8V 0.45A GS ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Mechanical Data ideal for high efficiency power management applications. Case: X2-DFN0806-3 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Load switch Moisture Sensitivity: Level 1 per J-STD-020 Portable applications Terminals: Finish NiPdAu over Copper leadframe. Solderable e4 per MIL-STD-202, Method 208 Power Management Functions Weight: 0.00043 grams (approximate) Drain X2-DFN0806-3 Body S Diode Gate D G Gate Protection Source Diode Top View ESD PROTECTED Bottom View Equivalent Circuit Package Pin Configuration Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3900UFA-7B NU 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3900UFA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V DSS V Gate-Source Voltage V 8 GSS (Note 6) 0.65 I D Continuous Drain Current T = +70C (Note 6) 0.52 V = 4.5V A GS A (Note 5) I 0.55 D Pulsed Drain Current (Note 7) I 2.5 DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 490 Power Dissipation mW P D (Note 5) 390 (Note 6) 255 Thermal Resistance, Junction to Ambient C/W R JA (Note 5) 327 Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage 3 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.45 0.95 V V V = V , I = 250 A GS(th) DS GS D 400 760 V = 4.5V, I = 200mA GS D Static Drain-Source On-Resistance 480 930 m R V = 2.5V, I = 100mA DS(on) GS D 617 1500 V = 1.8V, I = 75mA GS D Forward Transfer Admittance Y 40 mS V = 3V, I = 10mA fs DS D Diode Forward Voltage (Note 8) V 0.7 1.2 V V = 0V, I = 300mA SD GS S DYNAMIC CHARACTERISTICS (Note 9) 42.2 Input Capacitance C pF iss V = 25V, V = 0V, DS GS 4.5 Output Capacitance C pF oss f = 1.0MHz 3,4 Reverse Transfer Capacitance C pF rss Gate Resistance R 468 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 0.7 nC Q g V = 4.5V, V = 15V, GS DS Gate-Source Charge 0.11 nC Q gs I = 200mA D Gate-Drain Charge 0.15 nC Q gd Turn-On Delay Time 10.5 t ns D(on) 7.8 Turn-On Rise Time t ns r V = 10V, I = 200mA DS D 80.6 V = 4.5V, R = 6 Turn-Off Delay Time t ns GS G D(off) 23.4 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on FR-4 PCB, with minimum recommended pad layout, except the device measured at t 10 sec. 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing 2 of 6 August 2013 DMN3900UFA Diodes Incorporated www.diodes.com Document number: DS35736 Rev. 4 - 2