DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized I max DS(ON) D V R max (BR)DSS DS(ON) T = +25C Small, form factor, thermally efficient package enables higher A density end products 12m V = 10V 11.5A GS 40V Occupies just 33% of the board area occupied by SO-8 enabling 10.3A 15m VGS = 4.5V smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: POWERDI 3333-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ) and yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.072 grams (Approximate) POWERDI 3333-8 D Pin 1 S S S G G D D D S D Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN4010LFG-7 2,000/Tape & Reel POWERDI 3333-8 DMN4010LFG-13 3,000/Tape & Reel POWERDI 3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN4010LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 40 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 11.5 A I A D State 9.2 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 14.2 A t<10s I A D 11.4 T = +70C A 80 A Pulsed Drain Current (10s pulse, duty cycle = 1%) I DM Maximum Continuous Body Diode Forward Current (Note 6) 2 A I S Avalanche Current (Note 7) L = 0.1mH 27 A I AS Avalanche Energy (Note 7) L = 0.1mH E 37 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.93 W D Steady state 137 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 89 Total Power Dissipation (Note 6) P 2.45 W D Steady state 52 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 6) 3 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J POWERDI is a registered trademark of Diodes Incorporated 2 of 7 March 2015 DMN4010LFG Diodes Incorporated www.diodes.com Document number: DS36764 Rev. 2 - 2 ADVANCE INFORMATION