DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production I D V R Low On-resistance (BR)DSS DS(ON) T = +25C C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 28A 24m V = 10V GS Halogen and Antimony Free. Green Device (Note 3) 40V 24A 32m V = 4.5V GS Mechanical Data Description Case: TO252 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. UL (R ) and yet maintain superior switching performance, making it DS(ON) Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Applications Solderable per MIL-STD-202, Method 208 e3 Weight: 0.33 grams (Approximate) Backlighting DC-DC Converters Power Management Functions D D TO252 G D S G S Equivalent Circuit Top View Top View Pin-Out Ordering Information (Note 4) Product Case Packaging DMN4026SK3-13 TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN4026SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 40 V V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 28 C Continuous Drain Current (Note 6) V = 10V I A GS D State 18 T = +100C C Maximum Body Diode Continuous Current 2.5 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 70 A I DM Avalanche Current (Note 7) L = 0.1mH 18 A I AS Avalanche Energy (Note 7) L = 0.1mH 17 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.6 A Total Power Dissipation (Note 5) W P D T = +70C 1.0 A Steady state 75 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 32.7 T = +25C 3.4 A Total Power Dissipation (Note 6) W P D T = +70C 2.1 A Steady state 37 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 18.1 C/W Thermal Resistance, Junction to Case (Note 6) R 4.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 40V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 15 24 V = 10V, I = 6A GS D Static Drain-Source On-Resistance m R DS(ON) 20 32 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1181 iss V = 20V, V = 0V, DS GS Output Capacitance C 85 pF oss f = 1.0MHz Reverse Transfer Capacitance C 63 rss Gate Resistance 1.5 R V = 0V, V = 0V, f = 1.0MHz G DS GS 9.6 Total Gate Charge (V = 4.5V) Q GS g 21.3 Total Gate Charge (V = 10V) Q GS g nC V = 20V, I = 8A DS D Gate-Source Charge 3.7 Q gs Gate-Drain Charge Q 3.0 gd Turn-On Delay Time t 4.3 D(ON) Turn-On Rise Time t 4.6 R V = 25V, R = 2.5 DD L ns Turn-Off Delay Time t 19.5 V = 10V, R = 3 D(OFF) GS G Turn-Off Fall Time t 3.1 F Body Diode Reverse Recovery Time t 12.0 ns I = 8A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge 3.85 nC Q I = 8A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN4026SK3 July 2015 Diodes Incorporated www.diodes.com Document Number DS37277 Rev. 2 - 2 NEW PRODUCT