DMN4026SSD
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Low On-Resistance
D
V R
(BR)DSS DS(ON) MAX
T = +25C
A
Low Input Capacitance
24m @V = 10V 9.0A
GS
Fast Switching Speed
40V
32m @V = 4.5V 7.8A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
Mechanical Data
state resistance (R ) and yet maintain superior switching
DS(ON)
performance, making it ideal for high efficiency power management
Case: SO-8
applications.
Case Material: Molded Plastic,Gree Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram below
Motor Control
Terminals: Finish Matte Tin annealed over Copper lead frame.
Backlighting
Solderable per MIL-STD-202, Method 208
Power Management Functions
Weight: 0.074 grams (approximate)
DC-DC Converters
D 1 D2
SO-8
S1 D1
G1 D1
S2
D2
G1 G2
D2
G2
Top View
S1 S2
Top View Equivalent Circuit
Internal Schematic
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMN4026SSD-13 Standard SO-8 2,500/Tape & Reel
DMN4026SSDQ-13 Automotive SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN4026SSD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
Steady A 7.0
A
I
D
State 5.6
T = +70C
A
Continuous Drain Current (Note 7) V = 10V
GS
T = +25C 9.0
A
T<10s I A
D
7.2
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 7) I 2.5 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 70 A
DM
Thermal Characteristics
Characteristic Symbol Value Units
1.3
T = +25C
A
Total Power Dissipation (Note 6) W
P
D
0.8
T = +70C
A
Steady State 98
Thermal Resistance, Junction to Ambient (Note 6) C/W
R
JA
t<10s 59
1.8
T = +25C
A
Total Power Dissipation (Note 7) W
P
D
1.1
T = +70C
A
Steady State 71
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
t<10s 43 C/W
Thermal Resistance, Junction to Case (Note 7) 11.8
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolMinTypMaxUnit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(th) DS GS D
15 24
V = 10V, I = 6A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
20 32
V = 4.5V, I = 5A
GS D
Diode Forward Voltage 0.7 1.0 V
V V = 0V, I = 1.0A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance 1060
C
iss
V = 20V, V = 0V,
DS GS
Output Capacitance 84 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance C 58
rss
Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz
G DS GS
Total Gate Charge (V = 4.5V) Q 8.8 20
GS g
Total Gate Charge (V = 10V) Q 19.1 43
GS g
nC V = 20V, I = 8A
DS D
Gate-Source Charge Q 3.0 7.5
gs
Gate-Drain Charge 2.5 6
Q
gd
Turn-On Delay Time 5.3
t
D(on)
Turn-On Rise Time 7.1
t V = 25V, R = 2.5
r DD L
nS
Turn-Off Delay Time 15.1 = 10V, R = 3
t V
D(off) GS G
Turn-Off Fall Time
t 4.8
f
Body Diode Reverse Recovery Time t 10.5 nS I = 8A, di/dt = 100A/s
rr F
Body Diode Reverse Recovery Charge Q 4.15 nC I = 8A, di/dt = 100A/s
rr F
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6 June 2014
DMN4026SSD
Diodes Incorporated
www.diodes.com
Document number: DS36351 Rev. 4 - 2