DMN4030LK3 Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BVDSS RDS(ON) Fast Switching Speed TA = +25C Lead-Free Finish RoHS Compliant (Notes 1 & 2) 9.6A 30m VGS = 10V Halogen and Antimony Free. Green Device (Note 3) 40V For automotive applications requiring specific change 7.4A 50m VGS = 4.5V control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. Description and Applications A listing can be found at DMN4030LK3 Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage 40 V VDSS Gate-Source Voltage 20 V VGSS Steady T = +25C 9.6 A Continuous Drain Current (Note 5) V = 10V I A GS D State 7.7 T = +70C A Maximum Body Diode Continuous Current (Note 5) 9.6 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) 37.7 A IDM Pulsed Source Current (10s Pulse, Duty Cycle = 1%) (Note 6) 37.7 A ISM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 4.18 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 29.9 C/W JA Total Power Dissipation (Note 7) T = +25C P 2.14 W A D Steady State Thermal Resistance, Junction to Ambient (Note 7) R 58.4 C/W JA Thermal Resistance, Junction to Case (Note 8) R 2.46 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 40 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1 A IDSS VDS = 40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250A 21 30 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m RDS(ON) 37 50 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.95 1.1 V V = 0V, I = 12A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 604 iss VDS = 20V, VGS = 0V, Output Capacitance 106 pF Coss f = 1.0MHz Reverse Transfer Capacitance 59.6 Crss 6.5 Total Gate Charge (VGS = 4.5V) Qg 12.9 Total Gate Charge (VGS = 10V) Qg nC V = 20V, I = 12A DS D Gate-Source Charge 2.3 Qgs Gate-Drain Charge 3.6 Qgd Turn-On Delay Time t 4.2 D(ON) Turn-On Rise Time t 12.4 R VDD = 20V, ID = 12A ns Turn-Off Delay Time t 13.8 VGS = 10V, RG = 6 D(OFF) Turn-Off Fall Time t 10.7 F Body Diode Reverse Recovery Time 135 ns tRR IF = 12A, di/dt = 100A/s Body Diode Reverse Recovery Charge 799 nC QRR IF = 12A, di/dt = 100A/s Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as note 5, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN4030LK3 February 2021 Diodes Incorporated www.diodes.com Document Number DS33042 Rev. 4 - 2