A Product Line of Diodes Incorporated DMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D V R (BR)DSS DS(on) Low on-resistance T = 25C A Fast switching speed 34m V = 10V 6.3A GS Max Q rated g 40V Green component and RoHS compliant (Note 1) 59m V = 4.5V 4.8A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for Case: SO-8 high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Motor control Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See diagram below DC-DC Converters Terminals: Finish - Matte Tin annealed over Copper lead frame. Power management functions Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) SO-8 S1 D1 D1 D2 G1 D1 S2 D2 G1 G2 G2 D2 S1 S2 Top View Top View Equivalent Circuit Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSD-13 N4034SD 13 12 2,500 Notes: 1. Diodes, Inc. defines Green products as those which are RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information = Manufacturers Marking N4034SD = Product Type Marking Code N4034SD YYWW = Date Code Marking YY = Year (ex: 09 = 2009) YY WW WW = Week (01 - 53) 1 of 9 January 2012 DMN4034SSD Diodes Incorporated www.diodes.com Document Number DS32105 Rev 2 - 2 ADVANCE INFORMATION A Product Line of Diodes Incorporated DMN4034SSD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage 40 V V DSS Gate-Source voltage (Note 2) V 20 V GS Single Pulsed Avalanche Energy (Note 9) E 27 mJ AS Single Pulsed Avalanche Current (Note 9) I 15.25 A AS (Note 4) 6.3 Continuous Drain current V = 10V T = 70C (Note 4) I 5.0 A GS A D (Note 3) 4.8 Pulsed Drain current V = 10V (Note 5) I 24.8 A GS DM Continuous Source current (Body diode) (Note 4) I 3.3 A S Pulsed Source current (Body diode) (Note 5) I 24.8 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.25 (Notes 3 & 6) 10.0 Power dissipation 1.80 W (Notes 3 & 7) P D Linear derating factor 14.3 mW/C 2.14 (Notes 4 & 6) 17.2 (Notes 3 & 6) 100 Thermal Resistance, Junction to Ambient (Notes 3 & 7) R 70 JA C/W (Notes 4 & 6) 58 Thermal Resistance, Junction to Lead (Notes 6 & 8) 55 R JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 2. AEC-Q101 V maximum is 16V. GS 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t 10 sec. 5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 6. For a dual device with one active die. 7. For a device with two active die running at equal power. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 9. UIS in production with L = 100H, V = 40V. DD 2 of 9 January 2012 DMN4034SSD Diodes Incorporated www.diodes.com Document Number DS32105 Rev 2 - 2 ADVANCE INFORMATION