A Product Line of Diodes Incorporated DMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D V R (BR)DSS DS(on) Low on-resistance T = 25C A Fast switching speed 34m V = 10V 7.2A GS Max Q rated g 40V Green component and RoHS compliant (Note 1) 59m V = 4.5V 5.5A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: SO-8 and yet maintain superior switching performance, making it ideal for Case Material: Molded Plastic, Green Molding Compound. UL high efficiency power management applications. Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Motor control Terminals: Finish - Matte Tin annealed over Copper lead frame. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (approximate) Power management functions D SO-8 G S Top View Top View Equivalent Circuit Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN4034SSS-13 N4034SS 13 12 2,500 Note: 1. Diodes, Inc. defines Green products as those which are RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information = Manufacturers Marking N4034SS = Product Type Marking Code YYWW = Date Code Marking N4034SS YY = Year (ex: 09 = 2009) YY WW WW = Week (01 - 53) 1 of 9 January 2012 DMN4034SSS Diodes Incorporated www.diodes.com Document Number DS32106 Rev 2 - 2 ADVANCE INFORMATION A Product Line of Diodes Incorporated DMN4034SSS Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage 40 V V DSS Gate-Source voltage (Note 2) V V 20 GS Single Pulsed Avalanche Energy (Note 7) E 27 mJ AS Single Pulsed Avalanche Current (Note 7) I 15.25 A AS (Note 4) 7.2 Continuous Drain current V = 10V T = 70C (Note 4) I 5.8 A GS A D (Note 3) 5.4 Pulsed Drain current (Note 5) 33.0 A V = 10V I GS DM Continuous Source current (Body diode) (Note 4) I 4.1 A S Pulsed Source current (Body diode) (Note 5) I 33.0 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.56 (Note 3) Power dissipation 12.5 W P D Linear derating factor 2.8 mW/C (Note 4) 22.5 (Note 3) 80 Thermal Resistance, Junction to Ambient R JA (Note 4) 44.5 C/W Thermal Resistance, Junction to Lead (Note 6) R 37 JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 2. AEC-Q101 V maximum is 16V. GS 3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 4. Same as note (3), except the device is measured at t 10 sec. 5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 7. UIS in production with L = 100H, V = 40V. DD 2 of 9 January 2012 DMN4034SSS Diodes Incorporated www.diodes.com Document Number DS32106 Rev 2 - 2 ADVANCE INFORMATION