DMN4035LQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) max ID max Low Input Capacitance Fast Switching Speed 42m V = 10V 4.6A GS Low Input/Output Leakage 40V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 52m V = 4.5V 4.1A GS Halogen and Antimony Free. Green Device (Note 3) The DMN4035LQ is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. DMN4035LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C 4.6 A Continuous Drain Current (Note 6) VGS = 10V ID State 3.7 TA = +70C Maximum Body Diode Forward Current (Note 6) 1.5 A IS Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 25 A DM Pulsed Source Current (10s Pulse, Duty Cycle = 1%) I 25 A SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.72 W Thermal Resistance, Junction to Ambient (Note 5) Steady State R 171 C/W JA Power Dissipation (Note 6) P 1.4 W D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 93 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 30 42 VGS = 10V, ID = 4.3A Static Drain-Source On-Resistance m RDS(ON) 40 52 VGS = 4.5V, ID = 3.9A Diode Forward Voltage 0.7 1.1 V VSD VGS = 0V, IS = 1.25A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 574 Ciss VDS = 20V, VGS = 0V, Output Capacitance Coss 87.8 pF f = 1MHz Reverse Transfer Capacitance C 38.7 rss Gate Resistance R 1.6 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 5.9 GS g Total Gate Charge (V = 10V) Q 12.5 GS g nC V = 20V, I = 3.9A DS D Gate-Source Charge Q 1.7 gs Gate-Drain Charge 2.2 Qgd Turn-On Delay Time 3.1 tD(ON) Turn-On Rise Time 2.6 tR V = 20V, V = 10V, DD GS ns Turn-Off Delay Time 15 tD(OFF) RL = 20, RG = 6 Turn-Off Fall Time tF 5.5 Reverse Recovery Time t 6.5 ns RR I = 3.9A, di/dt = 500A/s F Reverse Recovery Charge Q 1.2 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN4035LQ December 2019 Diodes Incorporated www.diodes.com Document number: DS41026 Rev. 3 - 2