DMN4040SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 30m V = 10V 13.8A GS Low Input/Output Leakage 40V Lead Free By Design/RoHS Compliant (Note 1) 54m V = 4.5V 10.3A GS Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: TO252-3L state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. UL performance, making it ideal for high efficiency power management Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Backlighting Weight: 0.33 grams (approximate) DC-DC Converters Power management functions D D TO252-3L G D S GS Equivalent Circuit Top View Top View Pin-Out Ordering Information (Note 3) Part Number Case Packaging DMN4040SK3-13 TO252-3L 2500 / Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DMN4040SK3 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = 25C Steady A 6.0 Continuous Drain Current (Note 4) V = 10V A GS I D State 4.8 T = 70C A Steady T = 25C 9.3 A Continuous Drain Current (Note 5) V = 10V I A GS D State 7.4 T = 70C A T = 25C 13.8 A Continuous Drain Current (Note 5) V = 10V t 10s I A GS D 11.0 T = 70C A Steady T = 25C 6.9 A Continuous Drain Current (Note 5) V = 4.5V A GS I D State 5.5 T = 70C A T = 25C 10.3 A Continuous Drain Current (Note 5) V = 4.5V t 10s I A GS D T = 70C 8.2 A Pulsed Drain Current (Note 6) 50 A I DM Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 4) P 1.71 W D Thermal Resistance, Junction to Ambient T = 25C (Note 4) R 72.9 C/W A JA Power Dissipation (Note 5) P 4.1 W D Thermal Resistance, Junction to Ambient T = 25C (Note 5) R 30.8 C/W A JA Power Dissipation (Note 5) t 10s P 8.9 W D 14 C/W Thermal Resistance, Junction to Ambient T = 25C (Note 5) t 10s R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics T = 25C unless otherwise stated A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 - - V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - 1.0 A V = 40V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.8 2.3 3.0 V V = V , I = 250 A GS(th) DS GS D - 20 30 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS (ON) - 43 54 V = 4.5V, I = 6A GS D Forward Transfer Admittance Y - 11 - S V = 5V, I = 12A fs DS D Diode Forward Voltage V - 0.76 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 945 - C iss V = 20V, V = 0V, DS GS Output Capacitance - 69 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 58 - C rss Gate Resistance - 1.45 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge V = 4.5V Q - 8.4 - V = 4.5V, V = 20V, I = 12A GS g GS DS D Total Gate Charge V = 10V Q - 18.6 - GS g nC V = 10V, V = 20V, GS DS Gate-Source Charge Q - 3.3 - gs I = 12A D Gate-Drain Charge Q - 2.2 - gd Turn-On Delay Time t - 6.4 - ns D(on) Turn-On Rise Time t - 9.7 - ns r V = 10V, V = 20V, GS DS Turn-Off Delay Time - 19.8 - ns R = 1.6, R = 3 t L G D(off) Turn-Off Fall Time - 3.1 - ns t f Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 5. Device mounted on 2 x 2 FR-4 PCB with high coverage 2 oz. Copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 October 2010 DMN4040SK3 Diodes Incorporated www.diodes.com Document number: DS32043 Rev. 2 - 2