DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Low On-Resistance V R (BR)DSS DS(on) max T = 25C A Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m V = 10V 4.8A GS Gree Device (Note 2) 45V 62m V = 4.5V 4.1A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: TSOT26 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish annealed over Copper leadframe. Power management functions Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.013 grams (approximate) Drain TSOT26 Body D D 1 6 Diode Gate D 2 5 D G 3 4 S Source Equivalent Circuit Top View Top View Pin Configuration Ordering Information (Note 3) Part Number Case Packaging DMN4060SVT-7 TSOT26 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.s Green policy can be found on our website at DMN4060SVT Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 45 V DSS Gate-Source Voltage V 20 V GSS T = 25C Steady A 4.8 A I D State 3.8 T = 70C A Continuous Drain Current (Note 5) V = 10V GS T = 25C 6.1 A t<10s I A D 4.8 T = 70C A Steady T = 25C 4.1 A I A D State 3.2 T = 70C A Continuous Drain Current (Note 5) V = 5V GS T = 25C 5.2 A t<10s I A D 4.1 T = 70C A Maximum Body Diode Forward Current (Note 5) I 2.1 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 30 A DM Avalanche Current (Note 6) L = 0.1mH I 14.2 A AR Avalanche Energy (Note 6) L = 0.1mH 10 mJ E AR Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Units T = 25C 1.2 A Total Power Dissipation (Note 4) W P D T = 70C 0.75 A Steady state 106 C/W Thermal Resistance, Junction to Ambient (Note 4) R JA t<10s 69 C/W T = 25C 1.8 A Total Power Dissipation (Note 5) W P D T = 70C 1.1 A Steady state 68 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 44 C/W Thermal Resistance, Junction to Case (Note 5) 20 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG 100 100 P = 10s W Single Pulse R = 72C/W R 80 JA DS(on) R = r * R JA(t) (t) JA 10 Limited T - T = P * R JA JA(t) 60 DC 1 P = 10s W P = 1s W 40 P = 100ms W P = 10ms W P = 1ms W 0.1 P = 100s W 20 0.01 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.1 1 10 100 t1, PULSE DURATION TIME (sec) V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area 2 of 7 February 2012 DMN4060SVT Diodes Incorporated www.diodes.com Document number: DS35702 Rev. 2 - 2 ADVANCE INFORMATION P , PEAK TRANSIENT POIWER (W) (PK) I, DRAIN CURRENT (A) D