DMN4468LSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Low On-Resistance
I max
D
V R max
(BR)DSS DS(ON)
Low Input Capacitance
T = +25C
A
Fast Switching Speed
14m @ V = 10V 10A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
30V
Halogen and Antimony Free. Green Device (Note 3)
20m @ V = 4.5V 8A
GS
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
This MOSFET has been designed to minimize the on-state
Case: SO-8
resistance (R ) and yet maintain superior switching
DS(on)
Case Material: Molded Plastic, Green Molding Compound.
performance, making it ideal for high efficiency power management
UL Flammability Classification Rating 94V-0
applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Backlighting
Weight: 0.072 grams (approximate)
Power Management Functions
DC-DC Converters
D
S D
SO-8
S
D
G
S
D
G
D
S
Top View
Top View Equivalent circuit
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN4468LSS-13 SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN4468LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Steady TA = +25C 10
Continuous Drain Current (Note 5) ID A
State TA = +70C 9
Pulsed Drain Current (10 s pulse, duty cycle = 1%) IDM 50 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 1.52 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) 82 C/W
R
JA
Thermal Resistance, Junction to Case (Note 6) R 8.2 C/W
Jc
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage 30 V
BV V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 30V, V = 0V
J DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V 1.05 1.95 V V = V , I = 250 A
GS(th) DS GS D
V = 10V, I = 11.6A
11 14 GS D
Static Drain-Source On-Resistance m
R
DS (ON)
15 20
V = 4.5V, I = 10A
GS D
Forward Transfer Admittance |Y | 8 S V = 5V, I = 11.6A
fs DS D
Diode Forward Voltage V 0.73 0.95 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C 867 pF
iss
V = 10V, V = 0V,
DS GS
Output Capacitance 85 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 81 pF
C
rss
Gate Resistance 1.39
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge Q 18.85 nC
g
V = 10V, V = 15V,
GS DS
Gate-Source Charge Q 2.59 nC
gs
I =11.6A
D
Gate-Drain Charge Q 6.15 nC
gd
Turn-On Delay Time t 5.46 ns
D(on)
Turn-On Rise Time t 14.53 ns
r V = 15V, V = 10V,
DD GS
Turn-Off Delay Time t 18.84 ns R = 1.3, R = 3 , I = 1A
D(off) L G D
Turn-Off Fall Time t 6.01 ns
f
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2 of 6 October 2013
DMN4468LSS
Diodes Incorporated
www.diodes.com
Document number: DS31773 Rev. 5 - 2
NEW PRODUCT