DMN4800LSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefitss 14m V = 10V GS I max D Low Input Capacitance V R (BR)DSS DS(on) T = +25C A Fast Switching Speed Low Input/Output Leakage 14m VGS = 10V 8.0A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m VGS = 4.5V 6.7A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching Case: SO-8 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: Finish - Matte Tin annealed over Copper lead frame. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power management functions Weight: 0.072 grams (approximate) D S D SO-8 S D G S D G D S Equivalent circuit Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN4800LSSL-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN4800LSSL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C Drain Current (Note 5) VGS = 10V Steady A 8.0 A I D State 6.4 T = +70C A Drain Current (Note 5) VGS = 10V Steady T = +25C 6.7 A I A D State 5.3 T = +70C A Pulsed Drain Current (Note 6) I 50 A DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.46 W D Thermal Resistance, Junction to Ambient 86 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 1.2 1.6 V V = V , I = 250 A GS(th) DS GS D 11 14 V = 10V, I = 8A GS D Static Drain-Source On-Resistance R m DS (ON) 14 20 V = 4.5V, I = 7A GS D Forward Transconductance 8 S g V = 10V, I = 8A fs DS D Diode Forward Voltage (Note 7) 0.72 0.94 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance 798 pF C iss V = 10V, V = 0V DS GS Output Capacitance C 128 pF oss f = 1.0MHz Reverse Transfer Capacitance C 122 pF rss Gate Resistance R 1.37 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge Q 8.7 g Gate-Source Charge Q 1.7 nC V = 5V, V = 15V, I = 9A gs GS DS D Gate-Drain Charge Q 2.4 gd Turn-On Delay Time t 5.03 d(on) Rise Time 4.50 t V = 15V, V = 10V, r DD GEN ns Turn-Off Delay Time 26.33 R = 15 , R = 6.0 , I = 1A t L G D d(off) Fall Time 8.55 t f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 November 2013 DMN4800LSSL Diodes Incorporated www.diodes.com Document number: DS35016 Rev. 4 - 2 NEW PRODUCT