DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET I D V R (BR)DSS DS(ON) T = +25C Low On-Resistance A Very Low Gate Threshold Voltage 1.6 V = 10V 500 mA GS 50V Low Input Capacitance 2.5 V = 4.5V 200 mA GS Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: SOT23 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) SOT23 D G S ESD protected Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN53D0L-7 SOT23 3000/Tape & Reel DMN53D0L-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN53D0L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V 50 V DSS Gate-Source Voltage V 20 V GSS Drain Current (Note 6) I 500 mA D Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 370 mW D Thermal Resistance, Junction to Ambient (Note 5) 344 C/W R JA Total Power Dissipation (Note 6) P 540 mW D Thermal Resistance, Junction to Ambient (Note 6) 236 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 50 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 50V, V = 0V DSS DS GS Gate-Body Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.8 1.5 V V V = V , I = 250A GS(th) DS GS D V = 10V, I = 500mA 1.6 GS D Static Drain-Source On-Resistance R 2.5 V = 4.5V, I = 200mA DS(ON) GS D 4.5 V = 2.5V, I = 100mA GS D Source-Drain Diode Forward Voltage 1.4 V V V = 0V, I = 500mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 46 pF C iss V = 25V, V = 0V DS GS Output Capacitance 5.3 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 4.0 pF rss Total Gate Charge Q 0.6 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.2 nC gs I = 250mA D Gate-Drain Charge Q 0.1 nC gd Turn-On Delay Time t 2.7 ns D(on) Turn-On Rise Time t 2.5 ns r V = 30V, V = 10V, DD GS Turn-Off Delay Time 19 ns R = 25 , I = 200mA t G D D(off) Turn-Off Fall Time 11 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 5 May 2014 DMN53D0L Diodes Incorporated www.diodes.com Document number: DS37029 Rev. 2 - 2 NEW PRODUCT