DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features N-Channel MOSFET I D V R (BR)DSS DS(ON) T = +25C Low On-Resistance A Low Input Capacitance 2.0 V = 10V 360mA GS 50V Fast Switching Speed 3.0 V = 5V 250mA GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT323 Case Material: Molded Plastic. UL Flammability Classification Applications Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminals: Matte Tin Finish annealed over Alloy 42 leadframe e3 Battery Operated Systems and Solid-State Relays (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Terminal Connections: See Diagram Memories, Transistors, etc Weight: 0.006 grams (approximate) Drain SOT323 D Gate Gate G S Protection Source Diode ESD PROTECTED Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN53D0LW-7 SOT323 3,000/Tape & Reel DMN53D0LW-13 SOT323 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN53D0LW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 360 A mA Continuous Drain Current (Note 6) V = 10V I GS D State 250 T = +70C A Steady T = +25C 250 A Continuous Drain Current (Note 6) V = 5V I mA GS D State 200 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 700 mA DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 320 Total Power Dissipation P mW D (Note 6) 420 (Note 5) 395 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 301 Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 50V, V = 0V DSS DS GS Gate-Body Leakage I 10 A V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 1.5 V V = V , I = 100A GS(TH) DS GS D V GS(TH) Gate Threshold Voltage Temperature Coefficient (Note 8) -3.4 mV/C T J 2.0 V = 10V, I = 270mA GS D Static Drain-Source On-Resistance R DS (ON) 3.0 V = 5V, I = 200mA GS D Forward Transconductance g 80 mS V = 10V, I = 200mA FS DS D Diode Forward Voltage V 0.75 1.2 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 45.8 iss V = 25V, V = 0V DS GS Output Capacitance C 5.3 pF oss f = 1.0MHz Reverse Transfer Capacitance C 3.9 rss Total Gate Charge V = 10V Q 1.2 GS g Total Gate Charge V = 4.5V Q 0.6 V = 10V, V = 10V, GS g GS DS nC Gate-Source Charge 0.2 I = 250mA Q D gs Gate-Drain Charge 0.1 Q gd Turn-On Delay Time 2.7 t D(on) Turn-On Rise Time t 2.5 r V = 30V, V = 10V, DD GS nS R = 25 , I = 200mA Turn-Off Delay Time t 18.9 G D D(off) Turn-Off Fall Time t 11.0 f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 5 November 2013 DMN53D0LW Diodes Incorporated www.diodes.com Document number: DS36579 Rev. 2 - 2 NEW PRODUCT