DMN55D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT523 Very Low Gate Threshold Voltage Case Material: Molded Plastic,Gree Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 ESD Protected Gate to 2kV Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Halogen and Antimony Free. Green Device (Note 3) Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Terminal Connections: See Diagram PPAP Capable (Note 4) Weight: 0.002 grams (Approximate) D SOT523 D G G S Gate Protection S Diode ESD PROTECTED TO 2kV Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Qualification Case Packaging DMN55D0UT -7 Commercial SOT523 3,000/Tape & Reel DMN55D0UTQ -7 Automotive SOT523 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN55D0UT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 50 V V DSS Gate-Source Voltage V V 12 GSS Drain Current (Note 6) Continuous 160 mA I D Pulsed Drain Current (Note 6) 560 mA I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 50 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 50V, V = 0V DSS DS GS V = 8V, V = 0V 1.0 GS DS Gate-Source Leakage I A GSS 5.0 VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.7 0.8 1.0 V VGS(TH) VDS = VGS, ID = 250A 3.1 4 V = 4V, I = 100mA GS D Static Drain-Source On-Resistance R DS(ON) 4 5 V = 2.5V, I = 80mA GS D Forward Transconductance 180 mS g V = 10V, I = 100mA, f = 1.0KHz FS DS D Diode Forward Voltage 0.70 1.3 V V V = 0V, I = 100mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 25 pF C ISS Output Capacitance C 5 pF V = 10V, V = 0V, f = 1.0MHz OSS DS GS Reverse Transfer Capacitance C 2.1 pF RSS Gate Resistance R 500 f = 1MHz , V = 0V, V = 0V G GS DS Total Gate Charge (V = 4V) Q 295 pC GS G Total Gate Charge (V = 8V) Q 636 pC GS G V = 10V, DS Gate-Source Charge 72 pC I = 100mA QGS D Gate-Drain Charge 18 pC Q GD Turn-On Delay Time 6.0 ns t D(ON) Turn-On Rise Time 4.4 ns t V = 10V, V = 4V, R DD GS Turn-Off Delay Time 23.4 ns t R = 25, I = 100mA D(OFF) G D Turn-Off Fall Time t 11.0 ns F Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN55D0UT December 2015 Diodes Incorporated www.diodes.com Document number: DS31330 Rev. 6 - 2 NEW PRODUCT